
Allicdata Part #: | VSSAF512-M3/I-ND |
Manufacturer Part#: |
VSSAF512-M3/I |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 120V 5A DO221AC |
More Detail: | Diode Schottky 120V 5A Surface Mount DO-221AC (Sli... |
DataSheet: | ![]() |
Quantity: | 1000 |
14000 +: | $ 0.06234 |
Series: | TMBS®, SlimSMA™ |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 120V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 880mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 400µA @ 120V |
Capacitance @ Vr, F: | 360pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-221AC, SMA Flat Leads |
Supplier Device Package: | DO-221AC (SlimSMA) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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Diodes can be considered as electronic versions of valves. They allow current to flow in one direction and have only two terminals. While simple diodes are commonly used for power switching, rectifier diodes are used to convert AC to DC. In this article, we will discuss the application field and working principle of the VSSAF512-M3/I diode.
The VSSAF512-M3/I diode is a single rectifier diode suitable for high frequency, high amplitude applications and can be used in AC/DC or DC/DC power supplies. It has excellent forward and reverse recovery characteristics, and operates at extremely high frequencies up to several gigahertz. In addition, it has a low power dissipation rating of almost zero volts and a maximum forward current of 500mA.
The main application field for this diode is in digital power and control systems. It is used in circuits that require high frequency switching and current rectification, such as in high frequency power supplies and photovoltaic solar power systems. Additionally, it is compatible with SMD mounting and can be used in a wide range of applications from automotive electronics to industrial automation.
The working principle of the VSSAF512-M3/I diode is based on the nature of semiconductor materials. Diodes are composed of two materials, P-type and N-type, which form a junction between them. The flow of current is possible in only one direction across this junction, since the conduction in the other direction is blocked by an injective depletion layer. Therefore, when a positive voltage is applied across this junction, electrons flow from the N-side to the P-side, generating current. Similarly, when a negative voltage is applied, holes flow from the P-side to the N-side, resulting in current.
The VSSAF512-M3/I diode has a unique reverse recovery time, which is the time period between the moment the diode conducts current and the moment it stops conducting current. This property is essential for power supplies, since it determines the frequency of operation and accuracy of conversion. Additionally, the forward voltage drop is extremely low and is almost zero volts when operating at high frequencies. This prevents power loss and increases the efficiency of the system.
In conclusion, the VSSAF512-M3/I diode is a single rectifier diode suitable for high frequency, high amplitude applications. It has excellent forward and reverse recovery characteristics and operates at extremely high frequencies up to several gigahertz. This diode is mainly used for digital power and control systems and is compatible with SMD mounting for use in a variety of applications. Its unique working principle is based on the nature of semiconductor materials, and enables it to operate at very high frequencies with low power dissipation and forward voltage drops.
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VSSA210-E3/61T | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 100V 1.7A ... |
VSSAF515HM3/H | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 150V 5A DO... |
VSSAF5M10-M3/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 100V 5A DO... |
VSSAF56HM3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 60V 5A DO2... |
VSSAF510-M3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE SCHOTTKY 100V 5A DO... |
VSSA210-E3/5AT | Vishay Semic... | 0.09 $ | 1000 | DIODE SCHOTTKY 100V 1.7A ... |
VSSAF5M12-M3/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 120V 5A DO... |
VSSAF510HM3/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 100V 5A DO... |
VSSAF56-M3/6B | Vishay Semic... | 0.09 $ | 1000 | DIODE SCHOTTKY 60V 5A DO2... |
VSSAF510HM3/H | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 100V 5A DO... |
VSSAF5M6-M3/H | Vishay Semic... | -- | 10500 | DIODE SCHOTTKY 60V 5A DO2... |
VSSAF56HM3_A/H | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 60V 5A DO2... |
VSSAF5M12HM3/H | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 120V 5A DO... |
VSSAF5M15-M3/H | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 150V 5A DO... |
VSSAF3M6-M3/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 60V 3A DO2... |
VSSAF512-M3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE SCHOTTKY 120V 5A DO... |
VSSA210-M3/61T | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 100V 1.7A ... |
VSSAF5L45HM3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 45V 5A DO2... |
VSSAF512HM3/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 120V 5A DO... |
VSSAF5L45-M3/6B | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 45V 3A DO2... |
VSSA3L6S-M3/61T | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 60V 2.5A D... |
VSSA210HM3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 100V 2A DO... |
VSSAF3M10HM3/I | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 100V 3A DO... |
VSSAF515-M3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE SCHOTTKY 150V 5A DO... |
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