VT3060G-M3/4W

Series:	Automotive, AEC-Q101
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	60V
Current - Average Rectified (Io) (per Diode):	15A
Voltage - Forward (Vf) (Max) @ If:	730mV @ 15A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	850µA @ 60V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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VT3060G-M3/4W belongs to diodes, rectifiers and arrays family, a special family of electronic components that can be used in all types of circuits for rectification, protection, switching, and signal amplification. It is an ultrafast diode array module which offers high power density, low power consumption and very low leakage current. It is capable of operation frequencies up to 8GHz and switching speeds up to 350ns. VT3060G-M3/4W is suitable for use in high-speed application fields such as CDMA handsets, communications infrastructure, and test and measurement, as well as the latest communications applications. VT3060G-M3/4W is designed to be used as a power device in almost any type of circuit, ranging from low-frequency to ultra-high frequency applications. It is also suitable for frequency-doubling applications and high-speed switching. Because of its wide operating frequency range and fast switching speed, VT3060G-M3/4W is ideal for use in high-speed and efficient power electronics applications. The general principle of operation of VT3060G-M3/4W can be described as follows: current flows from the anode to the cathode of a diode when a forward-bias voltage is applied across the diode. This forward current flows in the same direction as the applied voltage, resulting in a voltage drop across the diode when a certain amount of the voltage is "lost" during the flow of current. Conversely, when the applied voltage is reversed, no current flows through the diode; this is referred to as reverse-bias operation. The forward-bias characteristics of VT3060G-M3/4W can be compared to those of a regular diode. The most significant difference is that, instead of one diode, the module consists of two diode arrays connected in series. This makes it possible for VT3060G-M3/4W to operate with a much higher reverse-bias voltage.The forward-bias current of VT3060G-M3/4W is extremely low due to its low-leakage current. This allows it to be used in applications where high efficiency, low power consumption and high power density are important. The low forward-bias current also minimizes the power dissipation, ensuring that the diode array module operates with higher efficiency.VT3060G-M3/4W is particularly suitable for use in high-power, high-frequency applications. This is due to its intricate construction, consisting of two diode arrays, each of which is made up of Schottky diodes. This makes possible a higher power density and very low leakage current, with low capacitance between anodes and cathodes on the modules.Additionally, VT3060G-M3/4W is also capable of boosting direct current (DC) output power in order to meet the requirements of higher-power applications. This feature is enabled by its two-pin configuration, which allows the two diode arrays to be connected in series. The two-pin configuration also allows for the use of the VT3060G-M3/4W in circuits where additional diodes are needed. In summary, VT3060G-M3/4W is a diode array module with a wide range of application fields, ranging from low-frequency to ultra-high frequency circuits. Its power density, low power consumption, very low leakage current and fast switching speeds make it suitable for use in high-power, high-frequency applications. It can be used in circuits with additional diodes or in combination with capacitors, resistors and transformers as well as inductors to achieve precise control of voltage and current in the circuit. The two-pin configuration of VT3060G-M3/4W makes it easy to connect the two diode arrays in series. It is also capable of boosting DC output power to suit the requirements of higher-power applications.

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