W25B40AVSNIG T&R Allicdata Electronics
Allicdata Part #:

W25B40AVSNIGT&R-ND

Manufacturer Part#:

W25B40AVSNIG T&R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 4M SPI 40MHZ 8SOIC
More Detail: FLASH Memory IC 4Mb (512K x 8) SPI 40MHz 8-SOIC
DataSheet: W25B40AVSNIG T&R datasheetW25B40AVSNIG T&R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SpiFlash®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is ultimately a device that records and receives data electronically, electromechanically or optically. W25B40AVSNIG T&R is an example of a memory device that has an application field in various situations and works on certain principles.

In terms of application field, W25B40AVSNIG T&R is most commonly used in the computer field. It is widely used for main memory, video memory, cache memory and the like. It can also be found in mobile phones, digital cameras, digital video recorders, home appliances, and so on in order to give these various devices the ability to store and retrieve data.

In terms of working principle, W25B40AVSNIG T&R is what is referred to as a serial memory device. This type of device is based on the Flash technology which uses an array of floating gates that are electronically isolated from each other above a semiconductor substrate. These floating gates are designed to store one bit of data each and this data can then be transferred to various devices.

The main advantage of W25B40AVSNIG T&R is its highly efficient memory architecture. It utilizes what is known as “multi-level cells” in which each cell can store up to 8 bits of data. This means that W25B40AVSNIG T&R has a much higher data density than other types of memory and thus can store more data in the same amount of space. Moreover, it is also much faster than other types of memory in terms of transferring data.

Another advantage of W25B40AVSNIG T&R is its durability. It is designed to withstand extreme temperatures which means that it can still operate even in very hot or cold environments. It is also designed to be resistant to shocks and other physical impacts and is therefore highly reliable.

Finally, it should be noted that W25B40AVSNIG T&R consumes very little power. This makes it ideal for various mobile devices and other applications where power consumption is an important consideration.

In conclusion, W25B40AVSNIG T&R devices are memory devices that are designed to be highly efficient and reliable. They have an application field in various different fields and are based on the Flash technology. They are highly efficient due to their multi-level cell architecture and consume very little power.

The specific data is subject to PDF, and the above content is for reference

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