Allicdata Part #: | W25B40VSNIGT&R-ND |
Manufacturer Part#: |
W25B40VSNIG T&R |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 4M SPI 40MHZ 8SOIC |
More Detail: | FLASH Memory IC 4Mb (512K x 8) SPI 40MHz 8-SOIC |
DataSheet: | W25B40VSNIG T&R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SpiFlash® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 4Mb (512K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | 15ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
W25B40VSNIG T&R application field and working principle has become increasingly relevant within the field of memory device applications, and is at the forefront of research and current technological developments within the area. The technology is composed of a doped amorphous-silicon-oxide-GaN (ASG) matrix, and is based on the principle of hierarchical tunnel junction (HTJ) structures.
The W25B40VSNIG T&R technology takes advantage of new alloy combinations, such as AlGaN and SiGe, which all have different conduction features; this aids in forming the HTJ structures and improves the entire device’s efficiency. The use of GaN/AlGaN/SiGe based-devices also allow for quick transistor and resistor applications, as well as being able to operate at temperatures over 200˚C.
The W25B40VSNIG T&R technology delivers better energy efficiency than other technologies, as the use of GaN-based transistors and resistors offer the advantage of lower on-resistance, and allow for improved switching speeds. The HTJ structures provide a way of storing terabytes of information in a very small device, meaning storage-intensive applications such as big data analysis can be more easily performed.
The technology is being used to create removable USB flash drives, SSDs, RAM modules, and new systems similar to DDR5. W25B40VSNIG T&R has made possible smaller, faster, and more energy-efficient memory devices, which will continue to be developed as new technologies are found. The technology’s scalability ensures that it is viable for the creation of high-capacity bulk storage devices with the same level of performance as current generations.
Furthermore, the HTJ structures can be embedded with ferromagnetic materials (FORM) in order to create non-volatile memory (NVM). NVM retains memory in the absence of a power supply, which is becoming increasingly important in smaller and portable computing devices. Such devices are used extensively in military and industrial applications, where energy efficiency and fast transmission are vital. It is likely that W25B40VSNIG T&R technology will begin to incorporate FORM in order to further improve the efficiency of their products.
W25B40VSNIG T&R technology is an important innovation in the development of smaller, faster, and more energy-efficient memory devices, and is set to revolutionize the memory industry. Its application in the field of memory is continuing to grow and develop, and it is likely to continue to be an important development in the future.
The specific data is subject to PDF, and the above content is for reference
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