W25M512JVCIQ TR Allicdata Electronics
Allicdata Part #:

W25M512JVCIQTR-ND

Manufacturer Part#:

W25M512JVCIQ TR

Price: $ 3.16
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 512M SPI 24TFBGA
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) SPI 104MHz ...
DataSheet: W25M512JVCIQ TR datasheetW25M512JVCIQ TR Datasheet/PDF
Quantity: 1000
2000 +: $ 2.87320
Stock 1000Can Ship Immediately
$ 3.16
Specifications
Series: SpiFlash®
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)
Description

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The W25M512JVCIQ/TR is a 512 megabit (Mb) non-volatile multi-level cell (MLC) NAND Flash memory device. It is categorized in the memory family and is commonly used for big data storage applications including external memory cards, USB flash drives, SSDs, and embedded systems. The device is organized as 16 banks of 64K words, each containing 2 planes of 8K pages. The page size of the device is 32K x 8 bits, providing support for CodeSourcery\'s EDMA 3.2 host controller and SDRAM controller.

Device features include erasable block sizes of 64KB, 1MB and 4MB, an integrated program and erase (PP&E) controller, and an extended temperature range of -35°C to +85°C. The device also supports a minimum operating voltage of 3.3V, with a voltage tolerance of 2.7 to 4.3V and a read/write current of 70mA. Data transfer speeds on the device include 2.2Mbits/s (66MHz) for writes, at 400bits/s (11MHz) for reads.

The W25M512JVCIQ/TR device is designed with an internal controller and interface logic, eliminating the need for an external controller, which reduces cost and complexity. The device internal logic applies error correction code (ECC) to the data stored in the device and reports the ECC result to the user. The device also provides asynchronous and synchronous signalling on the DQS pins for better signal quality and improved timing performance.

The device uses an Erase Suspend & Resume (ES&R) feature that allows the user to pause the erase operation during a busy period, resume it later and complete the task without any data loss. It also provides an auto refresh feature that refreshes all memory cells periodically in order to prevent data from being corrupted due to cell aging.

The W25M512JVCIQ/TR device has several other features such as block locking, write protection, and on-chip write protection. The device also supports high-performance programming, multiple page programming, page cache programming, and incremental programming. Furthermore, the device supports the industry-standard Multi-I/O protocol (SPI) for interfacing with a host controller. The device also supports detect block parameter setting and block locking.

In summary, the W25M512JVCIQ/TR is a 512 Megabit MLC NAND Flash memory device designed to provide high-performance data storage applications. The device supports several features including erasable block sizes, integrated program and erase controllers, extended temperature ranges, lower power consumption, error correction code, and an asynchronous interface. The device is suitable for use with CodeSource EDMA 3.2 host controller and SDRAM controller and offers the industry-standard Multi-I/O protocol.

The specific data is subject to PDF, and the above content is for reference

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