| Allicdata Part #: | W25M512JVEIQTR-ND |
| Manufacturer Part#: |
W25M512JVEIQ TR |
| Price: | $ 2.86 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Winbond Electronics |
| Short Description: | IC FLASH 512M SPI 104MHZ 8WSON |
| More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) SPI 104MHz ... |
| DataSheet: | W25M512JVEIQ TR Datasheet/PDF |
| Quantity: | 1000 |
| 4000 +: | $ 2.59785 |
| Series: | SpiFlash® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 512Mb (64M x 8) |
| Clock Frequency: | 104MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | SPI |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-WDFN Exposed Pad |
| Supplier Device Package: | 8-WSON (8x6) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The W25M512JVEIQTR is a type of memory that has been built to meet the needs of a wide variety of applications. This is a new type of memory that is much more durable and reliable than traditional forms of memory. The W25M512JVEIQTR has been designed to provide outstanding performance and reliability for a number of different applications.
The W25M512JVEIQTR is designed to provide a high-performance, reliable and scalable flash memory solution for a wide range of applications. It is an ideal choice for embedded processors, microcontrollers, digital logic circuits, telecom applications, automotive and other embedded applications. The W25M512JVEIQTR is also an excellent choice for data storage and data integrity solutions.
The W25M512JVEIQTR is a non-volatile, multi-level cell (MLC) NAND Flash device, which is designed for low-power applications. The main operating attributes of the W25M512JVEIQTR include a low power read/write capability, high write/read speeds, error correction and substantial non-volatility. The device is specifically designed with a FIFO-like approach, which allows it to maintain a consistent high-performance operation in low-power and high-temperature environments.
The W25M512JVEIQTR is available in a wide range of capacities ranging from 512 Kbits to 32 Mbits. The chip supports data transfer rates up to 100Mbits/s and is designed to work reliably even in extreme temperature environments. The device also features ECC (Error Correction Code) to ensure data integrity and reliability. The device also features dynamic wear-leveling, which ensures that data is written evenly across all memory blocks, eliminating the risk of data loss due to wear and tear.
The primary application field for the W25M512JVEIQTR is embedded processors, microcontrollers, digital logic circuits, telecom applications, automotive, industrial, consumer and other embedded applications. The device provides significant cost-savings due to its simple design, low power consumption, its small size and its easy-to-use interface.
The working principle of the W25M512JVEIQTR is based on the fact that data is stored in a series of non-volatile memory cells. These cells are arranged into a two-dimensional array, which allows for the efficient storage of very large amounts of information. When the device is powered up, the controller starts the read/write operations by sending commands to the memory cells. The cells then transfer or receive data at speeds up to 100Mbits/s resolution and with error correction to ensure data integrity. The device also features AC of DC Ground Sense detections to ensure robust operations in extreme environments.
The W25M512JVEIQTR is a highly reliable and efficient memory solution for embedded processors, microcontrollers, digital logic circuits, telecom applications, automotive and other embedded applications. The device features low power consumption, a small size and an easy-to-use interface for the greatest simplicity and reliability. Its FIFO-like approach ensures a consistent high-performance operation in low-power and high-temperature environments. The device also features ECC and dynamic wear-leveling, allowing for a reliable data storage and integrity solution.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| W25M02GVZEIT TR | Winbond Elec... | 2.74 $ | 1000 | IC FLASH 2G SPI 104MHZ 8W... |
| W25M512JVEIQ | Winbond Elec... | -- | 480 | IC FLASH 512M SPI 104MHZ ... |
| W25M512JVEIQ TR | Winbond Elec... | 2.86 $ | 1000 | IC FLASH 512M SPI 104MHZ ... |
| W25M512JVCIQ TR | Winbond Elec... | 3.16 $ | 1000 | IC FLASH 512M SPI 24TFBGA... |
| W25M02GVTCIG TR | Winbond Elec... | 3.06 $ | 1000 | IC FLASH 2G SPI 104MHZ 24... |
| W25M512JVFIQ TR | Winbond Elec... | 3.06 $ | 1000 | IC FLASH 512M SPI 104MHZ ... |
| W25M02GVTBIG TR | Winbond Elec... | 3.06 $ | 1000 | IC FLASH 2G SPI 104MHZ 24... |
| W25M512JVCIQ | Winbond Elec... | 3.61 $ | 1000 | IC FLASH 512M SPI 24TFBGA... |
| W25M02GVZEIG TR | Winbond Elec... | 2.74 $ | 1000 | IC FLASH 2G SPI 104MHZ 8W... |
| W25M512JVBIQ TR | Winbond Elec... | 3.16 $ | 1000 | IC FLASH 512M SPI 24TFBGA... |
| W25M512JVFIQ | Winbond Elec... | -- | 1000 | IC FLASH 512M SPI 104MHZ ... |
| W25M02GVTBIT TR | Winbond Elec... | 3.06 $ | 1000 | IC FLASH 2G SPI 104MHZ 24... |
| W25M02GVTCIT TR | Winbond Elec... | 3.06 $ | 1000 | IC FLASH 2G SPI 104MHZ 24... |
| W25M512JVBIQ | Winbond Elec... | 3.61 $ | 1000 | IC FLASH 512M SPI 24TFBGA... |
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W25M512JVEIQ TR Datasheet/PDF