W25P80VSSIG T&R Allicdata Electronics
Allicdata Part #:

W25P80VSSIGT&R-ND

Manufacturer Part#:

W25P80VSSIG T&R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 8M SPI 50MHZ 8SOIC
More Detail: FLASH Memory IC 8Mb (1M x 8) SPI 50MHz 8-SOIC
DataSheet: W25P80VSSIG T&R datasheetW25P80VSSIG T&R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SpiFlash®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8)
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 7ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC
Description

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Memory: W25P80VSSIG T&R Application Field and Working Principle

The W25P80VSSIG T&R is one of the most widely used types of memory in today\'s digital world. It is a non-volatile memory integrated circuit which has the ability to maintain device data and information even when powered down. Its application fields include data storage, real time clocks, automotive and industrial control, entertainment, educational and telecommunications.

The W25P80VSSIG T&R memory offers a wide range of features and benefits. It is built with flash memory technology and uses 0.18 micron CMOS fabrication process. This memory contains up to 8 gigabits of storage space, which is more than enough to meet all current storage needs. Its low power consumption and small size makes it ideal for embedded applications. The memory also provides environmental, static and ESD protection for added reliability and data accuracy.

The working principle of W25P80VSSIG T&R is applicable in various applications. The device\'s internal circuitry provides two layers of protection against data corruption, the error correction code (ECC) and the write penalty protection (WPP). The ECC is enabled to detect and correct single bit errors and increase the reliability of data stored in the device. The WPP utilizes an algorithm which enables the memory to determine whether a write operation can be successfully completed and prevent data corruption. Furthermore, its internal logic provides a power down protection which prevents data loss when the device is in idle mode and a programmable write protection feature that helps to protect the memory against accidental writes.

In conclusion, the W25P80VSSIG T&R is an innovative, reliable and efficient memory integrated circuit which is suitable for a wide range of applications. It is highly durable, providing long term protection of stored data and has the ability to perform a wide range of tasks, making it an ideal choice for embedded applications. Its multi-level error detection protocol, low power consumption and write protection features make it an ideal choice for secure data storage and reliable data exchange.

The specific data is subject to PDF, and the above content is for reference

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