W25X10VSNIG Allicdata Electronics
Allicdata Part #:

W25X10VSNIG-ND

Manufacturer Part#:

W25X10VSNIG

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 1M SPI 75MHZ 8SOIC
More Detail: FLASH Memory IC 1Mb (128K x 8) SPI 75MHz 8-SOIC
DataSheet: W25X10VSNIG datasheetW25X10VSNIG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: SpiFlash®
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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W25X10VSNIG is a kind of memory device that is widely used in modern industrial and consumer electronics. It is a type of non-volatile memory that stores information even when power is removed. It has a wide range of applications including automotive, industrial, medical, consumer, and embedded systems. It is ideal for applications that require high-capacity, low-power and robust data storage solutions. In this article, we will discuss the application field and working principle of W25X10VSNIG.

Application Field of W25X10VSNIG

W25X10VSNIG has a wide range of applications in modern industrial and consumer electronics. It can be used in automotive applications, such as safety systems and driving assistance systems. It is used in industrial processes to store data that must remain available even when power is interrupted. It is also used in medical applications such as medical imaging, point of care diagnostics, and patient record storage. In consumer applications, W25X10VSNIG is used in digital audio and video players, digital cameras, as well as gaming consoles and drone controllers. It is also widely used in embedded systems such as industrial controllers and remote monitoring systems.

Working Principle of W25X10VSNIG

W25X10VSNIG utilizes a non-volatile electron Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology. This type of memory offers robust data storage capability and is highly energy efficient. This makes it ideal for consumer electronics that require data to remain available even when power is removed. The STT-MRAM technology operates by placing two ferromagnetic layers within a cell, which is made of a thin insulator layer. When a small current is passed through the cell, it generates a spin-polarized current which transfers its spin polarization to the ferromagnetic cells. This alters the magnetization of one of the ferromagnetic layers, which is then detected by a magnetic field in neighboring cells. The data is then stored in the memory device as a magnetization pattern.

The STT-MRAM also offers fast data access, with read and write speeds up to 10 nanoseconds. This is much faster than other non-volatile memory technologies such as Flash memory, offering greater system performance for applications that require intensive data operations. Additionally, the STT-MRAM technology does not require regular refresh operations, further reducing energy consumption and extending system battery life.

Conclusion

In conclusion, W25X10VSNIG is a non-volatile memory device that utilizes advanced STT-MRAM technology to offer robust data storage and power efficiency. It is used in a wide range of applications, from automotive to consumer electronics, medical and embedded systems. Additionally, its fast data access and non-volatility make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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