W631GU8KB12I TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3L
Memory Size:	1Gb (128M x 8)
Clock Frequency:	800MHz
Write Cycle Time - Word, Page:	--
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.283 V ~ 1.45 V
Operating Temperature:	-40°C ~ 95°C (TC)
Mounting Type:	Surface Mount
Package / Case:	78-TFBGA
Supplier Device Package:	78-WBGA (10.5x8)

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Introduction

The W631GU8KB12I TR is a type of memory technology that is gaining increasing interest in a rapidly advancing world. Its wide application field and versatile working principle makes it a popular choice for many applications. This article will explore the advantages and limitations of the W631GU8KB12I TR technology and explain the working principle.

Application Field

The W631GU8KB12I TR technology is primarily used for electronic processing, storage, and communication. It has been used extensively in consumer electronic devices, such as digital cameras, digital video players, and digital audio players. It can also be used in industrial applications such as robotics, automation, and factory automation. In addition, the W631GU8KB12I TR can be used for military applications, including avionics, communications, navigation, and surveillance systems. As well, it can be used for security systems and for developing medical devices.

Advantages

The W631GU8KB12I TR technology offers many advantages over other types of memory such as increased speed, increased data transfer rates, improved power efficiency, and greater reliability. The technology increases data transfer speeds by up to 20%, which can save time and money for those who use it. The W631GU8KB12I TR also offers improved power efficiency, which helps reduce the energy required to access and store data. This improved power efficiency can reduce energy costs and improve the overall efficiency of the system. The W631GU8KB12I TR also offers greater reliability compared to traditional types of memory. Its increased speed, better power efficiency, and improved reliability make it an attractive option for a variety of applications.

Limitations

The W631GU8KB12I TR has some drawbacks, including its limited capacity, which may not be suitable for some applications. The technology is also limited in terms of its cost, which may be higher than some other types of memory. In addition, the technology is not as widely supported as some other types of memory, so users may need to use third-party solutions to access the technology.

Working Principle

The W631GU8KB12I TR technology is a type of nonvolatile memory that uses thin-film transistors to store data. The thin-film transistors act as memory cells, with an electric current being used to store data.The memory cells consist of a layer of polycrystalline silicon, which is deposited onto a glass substrate. The polycrystalline silicon is then patterned to create thin-film transistors. Each transistor is used to store a bit of data.When a current is applied to the thin-film transistors, they each activate and store a bit of data. Data is stored in the memory cells until the current is turned off. This data can then be recalled when the memory is accessed.

Conclusion

The W631GU8KB12I TR is a type of nonvolatile memory that is gaining increasing interest in a rapidly advancing world. Its wide application field, improved power efficiency and greater reliability make it a popular choice for many applications. Its working principle involves thin-film transistors, which act as memory cells, with an electric current being used to store data. However, it does have some drawbacks, including its limited capacity and higher cost.

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