W631GU8MB12I TR Allicdata Electronics
Allicdata Part #:

W631GU8MB12ITR-ND

Manufacturer Part#:

W631GU8MB12I TR

Price: $ 3.21
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC SDRAM 1GBIT 800MHZ 78BGA
More Detail: Memory IC
DataSheet: W631GU8MB12I TR datasheetW631GU8MB12I TR Datasheet/PDF
Quantity: 1000
2000 +: $ 2.91701
Stock 1000Can Ship Immediately
$ 3.21
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

W631GU8MB12I TR Application Field and Working Principle

W631GU8MB12I TR is a type of semiconductor memory technology developed by a semiconductor manufacturer. It is a non-volatile memory technology known as a NAND-type flash memory. The memory is based on a NAND architecture, which has been designed to provide low cost and high density storage. The W631GU8MB12I TR is one of the most widely used types of non-volatile memory due to its relatively low cost, small form factor, and wide range of applications.

Application Field

The W631GU8MB12I TR is used in a variety of embedded systems that require large amounts of data storage in a small form factor. Common applications include cellular phones, digital cameras, PDAs, and MP3 players. The small form factor of the W631GU8MB12I TR makes it ideal for use in places where space is at a premium. Additionally, the relatively low cost of the memory makes it a popular choice for applications with limited budgets.

The W631GU8MB12I TR can also be used in industrial control applications, due to its high reliability and low power consumption. The memory can be used to store program instructions, control parameters, and other system information. The low power consumption and long data retention time makes the W631GU8MB12I TR ideal for industrial control applications.

Working Principle

The W631GU8MB12I TR works by storing information in cells that are made up of a floating gate and a control gate. When the control gate is activated, electrons are drawn through the floating gate and stored. During a read operation, electrons from the floating gate are read out, allowing the memory cell to store and retrieve information. These memory cells are organized into a matrix, which allows for the storage of large amounts of data in a small area of space.

The W631GU8MB12I TR is a fast and reliable type of non-volatile memory. The W631GU8MB12I TR relies on a charge pump mechanism, which allows the memory to operate at a low voltage and high speed. The W631GU8MB12I TR also utilizes an on-chip error correction memory to prevent data corruption. This ensures that the information stored in the memory is always accurate.

The W631GU8MB12I TR is a popular choice for embedded applications due to its high reliability and small form factor. It is easy to integrate with larger systems and is relatively inexpensive. With its high performance, low power consumption and low cost, the W631GU8MB12I TR is a perfect choice for any embedded application that requires large amounts of data storage in a small form factor.

The specific data is subject to PDF, and the above content is for reference

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