| Allicdata Part #: | W9412G6KH-4TR-ND |
| Manufacturer Part#: |
W9412G6KH-4 TR |
| Price: | $ 1.27 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Winbond Electronics |
| Short Description: | IC DRAM 128M PARALLEL 66TSOP II |
| More Detail: | SDRAM - DDR Memory IC 128Mb (8M x 16) Parallel 250... |
| DataSheet: | W9412G6KH-4 TR Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 1.15909 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR |
| Memory Size: | 128Mb (8M x 16) |
| Clock Frequency: | 250MHz |
| Write Cycle Time - Word, Page: | 12ns |
| Access Time: | 48ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.4 V ~ 2.7 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
| Supplier Device Package: | 66-TSOP II |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
memory is the portion of a computer system used to store data, programs, and instruction for use in an information processing system. The W9412G6KH-4 TR is a memory device designed for mass data storage in a highly reliable and cost-effective way. It uses non-volatile Flash memory, which is a type of non-volatile computer storage that is able to store data even after power has been removed from the system. This makes the device ideal for applications where data needs to be injected into and accessed from memory quickly, without the need for a lot of time spent waiting for the data to be written to or read from conventional storage devices.
The W9412G6KH-4 TR device is a high-throughput, single-level memory device that offers both improved read/write performance and greater storage capacity than many comparable memory devices. Its high-speed interface allows for fast data retrieval and injection of data. Additionally, its intelligent error correction code (ECC) technology ensures data integrity and higher performance than other memory devices with less power consumption.
The W9412G6KH-4 TR device is also designed for use in demanding applications. It has specialized routines for sustained read/write performance and can run at high speeds for extended periods of time, making it suitable for use in data-heavy applications. Additionally, it has sufficient endurance to achieve extended endurance times in mission critical applications. With a wide range of operating temperatures, the device is also suitable for using in a variety of environments, including aerospace and industrial applications.
The W9412G6KH-4 TR device is an ideal choice for applications that require reliable and high-performance data storage. Its high-speed interface allows for rapid data injection and retrieval, while its ECC technology ensures data integrity. Additionally, its sustained read/write performance and wide range of operating temperatures make it suitable for a variety of environments. As such, the device offers reliable, high-performance storage for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| W9412G6KH-5 TR | Winbond Elec... | 1.11 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| W9412G6JH-5I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| W9412G6KH-4 TR | Winbond Elec... | 1.27 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| W9412G6JH-4 | Winbond Elec... | -- | 1000 | IC DRAM 128M PARALLEL 66T... |
| W9412G6KH-4 | Winbond Elec... | 1.31 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| W9412G6IH-5 | Winbond Elec... | -- | 1000 | IC DRAM 128M PARALLEL 66T... |
| W9412G6KH-5I TR | Winbond Elec... | 1.37 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| W9412G6KH-5I | Winbond Elec... | -- | 1000 | IC DRAM 128M PARALLEL 66T... |
| W9412G6KH-5 | Winbond Elec... | -- | 68 | IC DRAM 128M PARALLEL 66T... |
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W9412G6KH-4 TR Datasheet/PDF