Allicdata Part #: | W9412G6KH-4-ND |
Manufacturer Part#: |
W9412G6KH-4 |
Price: | $ 1.31 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 128M PARALLEL 66TSOP II |
More Detail: | SDRAM - DDR Memory IC 128Mb (8M x 16) Parallel 250... |
DataSheet: | W9412G6KH-4 Datasheet/PDF |
Quantity: | 1000 |
108 +: | $ 1.19280 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 128Mb (8M x 16) |
Clock Frequency: | 250MHz |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 48ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.4 V ~ 2.7 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP II |
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Memory: W9412G6KH-4 Application Field and Working Principle
The W9412G6KH-4 is a 6Kx16 bit CMOS Static RAM module that offers reliable performance, high speed, and low power consumption. It has a capacity of 6,144 words x 16 bits, allowing it to store up to 96K bits of data. The W9412G6KH-4 is powered by a 3.3V single +5V ±10% supply. It features a wide 6T access/read cycle time range from 15ns to 25ns and a typical operating temperature between 0°C to 70°C.
Features of W9412G6KH-4
- 6,144 x 16-bit CMOS Static RAM
- Low power consumption
- Single 3.3V +5V ±10% supply
- Wide 6T access/read cycle time range from 15ns to 25ns
- Operating temperature range of 0°C to 70°C
Applications of W9412G6KH-4
The W9412G6KH-4 is widely used in a variety of applications, including: embedded systems, digital signal processing (DSP) applications, microprocessors, memory modules, portable computers, industrial controllers and robotics.
Working Principle of W9412G6KH-4
The W9412G6KH-4 operates on a 6T access/read cycle time from 15ns to 25ns. It has 3 control pins (WE, OE and CS) that must be asserted before a valid read or write operation takes place. When WE and OE are low and CS is high, the RAM is in “standby” mode. When WE and CS go high, the system will begin a write operation depending on the OE state. A read begins when OE and CS go high, depending on the WE state. Write data is latched on the rising edge of WE and is written to the address being held on the falling edge. Read data is latched on the rising edge of OE and is passed to the output buffer on the falling edge. When not in “standby” mode, the RAM consumes an active power of 120mA typical.
The W9412G6KH-4 is ideal for embedded systems and memory modules applications that require a reliable and low power CMOS Static RAM. Its wide 6T access/read cycle time range and low power enables designers to achieve higher performance with fewer components. Its versatile design and wide operating temperature range make it a preferred choice for industrial controllers and robotics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
W9412G6KH-5 | Winbond Elec... | -- | 68 | IC DRAM 128M PARALLEL 66T... |
W9412G6IH-5 | Winbond Elec... | -- | 1000 | IC DRAM 128M PARALLEL 66T... |
W9412G6JH-5I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
W9412G6JH-4 | Winbond Elec... | -- | 1000 | IC DRAM 128M PARALLEL 66T... |
W9412G6KH-5 TR | Winbond Elec... | 1.11 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
W9412G6KH-4 TR | Winbond Elec... | 1.27 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
W9412G6KH-4 | Winbond Elec... | 1.31 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
W9412G6KH-5I TR | Winbond Elec... | 1.37 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
W9412G6KH-5I | Winbond Elec... | -- | 1000 | IC DRAM 128M PARALLEL 66T... |
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