W987D2HBJX6E Allicdata Electronics
Allicdata Part #:

W987D2HBJX6E-ND

Manufacturer Part#:

W987D2HBJX6E

Price: $ 1.91
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 128M PARALLEL 90VFBGA
More Detail: SDRAM - Mobile LPSDR Memory IC 128Mb (4M x 32) Par...
DataSheet: W987D2HBJX6E datasheetW987D2HBJX6E Datasheet/PDF
Quantity: 1000
240 +: $ 1.73549
Stock 1000Can Ship Immediately
$ 1.91
Specifications
Series: --
Packaging: Tray 
Part Status: Not For New Designs
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (4M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-VFBGA (8x13)
Description

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W987D2HBJX6E is a type of computer memory, particularly a dynamic random access memory (DRAM). As a form of digital memory, it is used to store digital information inside a computing device. This type of memory is considered volatile, meaning that the information stored in the memory will be lost when the power is turned off or when the device experiences a sudden power outage.

This memory technology is capable of providing faster access times compared to traditional storage media. This is because DRAM can store data on the same memory chip, allowing parallel accesses. As such, W987D2HBJX6E DRAM has become increasingly popular in the computing industry due to its high performance and low cost.

W987D2HBJX6E DRAM is used in a variety of applications, ranging from desktop computers to servers and even mobile devices. It is also commonly used in embedded systems such as those found in cars and automation systems. This type of memory is also used in graphics cards, where it allows for faster graphics processing.

The working principle of W987D2HBJX6E DRAM is relatively simple. A memory cell contains two transistors, known as access transistors, which control whether or not the memory cell can be written to or read from. A memory cell is also connected to a capacitor, which stores the digital information. When power is applied to the memory cell, the access transistors will open, allowing the capacitors to charge or discharge, thus storing or retrieving data.

Writing data to a W987D2HBJX6E memory cell is simple. First, the memory cell will be enabled, allowing the power to flow to the capacitor. Then, the stored data will be “latched” or “read” by applying a signal to the memory cell. This signal can either be a voltage, or a “read cycle” which will continually read or write data to the same memory cell.

Reading data from a W987D2HBJX6E memory cell is similarly simple. The memory cell will be enabled, and a signal will be passed to the access transistors. If the signal is a voltage, the access transistors will open, allowing the information stored in the capacitor to be passed to an output, and subsequently to a processor. If the signal is a “read cycle” then the contents of the memory cell will be read multiple times, and the average value of all the reads will be used as the output.

In summary, W987D2HBJX6E DRAM is a type of computer memory that is used to store digital information inside a computing device. It is commonly used in desktop computers, servers, mobile devices, embedded systems, and graphics cards due to its high performance and low cost. The working principle of W987D2HBJX6E DRAM involves enabling the memory cell, reading or writing data by applying a voltage or by sending a “read cycle”, and reading or writing the data stored in the capacitor.

The specific data is subject to PDF, and the above content is for reference

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