
Allicdata Part #: | W987D6HBGX6ETR-ND |
Manufacturer Part#: |
W987D6HBGX6E TR |
Price: | $ 1.66 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 128M PARALLEL 54VFBGA |
More Detail: | SDRAM - Mobile LPSDR Memory IC 128Mb (8M x 16) Par... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 1.50831 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPSDR |
Memory Size: | 128Mb (8M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TFBGA |
Supplier Device Package: | 54-VFBGA (8x9) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory W987D6HBGX6E TR Application Field and Working Principle
Memory W987D6HBGX6E TR is a type of process technology used in the semiconductor industry to produce integrated circuits (ICs) with high performance. This technology is used for a wide range of applications, such as mobile and automotive electronics, aerospace and defense, digital home appliances, and gaming. It is also used in the telecommunications and medical electronics industries, as well as in industrial and power systems.
The W987D6HBGX6E TR process technology uses a multi-layer interconnect structure that involves the use of thin films and low-k dielectrics. The technology has the ability to transfer small signals over long distances with minimal loss, which enables high-speed operations. This high-speed operation is possible by the small contact area between the layers, which keeps the voltage lower and reduces the power consumption.
The working principle of the W987D6HBGX6E TR process technology is simple. It is based on the principle of capacitive coupling which is used to transfer signals between layers. Instead of using wire bonding, the capacitive coupling process uses thin films made of a low-k dielectric material, such as silicon dioxide or hafnium oxide, which act as an insulator. The two layers are placed on top of each other, with one layer having an electrode on top and the other layer having an electrode on the bottom. A voltage is applied to the top layer, which creates an electric field between the two layers, resulting in a capacitance-coupled signal between them. The signal is then transferred through the layers and through the interconnect structure.
The W987D6HBGX6E TR process technology also allows for the integration of a wide range of components, including resistors, capacitors, transistors and diodes. This is done by using an interconnect technology known as copper interconnect. This technology allows for the fabrication of high-performance, low-cost and low-power integrated circuits, which are used for different applications, such as mobile and automotive electronics, telecommunications and many others.
Overall, the W987D6HBGX6E TR process technology is a versatile process used to manufacture integrated circuits with high performance. It combines the use of thin films, low-k dielectric materials and copper interconnect technology to transfer signals between layers, which makes it ideal for a wide range of applications. This process also offers advantages such as low power consumption, high speed operations and the ability to integrate a wide range of components, making it a popular choice for many different industries.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
W987D6HBGX6I TR | Winbond Elec... | 1.72 $ | 1000 | IC DRAM 128M PARALLEL 54V... |
W987D6HBGX6E TR | Winbond Elec... | 1.66 $ | 1000 | IC DRAM 128M PARALLEL 54V... |
W987D6HBGX7E | Winbond Elec... | -- | 1000 | IC DRAM 128M PARALLEL 54V... |
W987D2HBJX7E TR | Winbond Elec... | 1.72 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W987D6HBGX7E TR | Winbond Elec... | 1.66 $ | 1000 | IC DRAM 128M PARALLEL 54V... |
W987D2HBJX6E | Winbond Elec... | 1.91 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W987D2HBJX6I TR | Winbond Elec... | 1.76 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W987D6HBGX6I | Winbond Elec... | 1.86 $ | 1000 | IC DRAM 128M PARALLEL 54V... |
W987D2HBJX6I | Winbond Elec... | 1.97 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W987D6HBGX6E | Winbond Elec... | -- | 1000 | IC DRAM 128M PARALLEL 54V... |
W987D2HBJX7E | Winbond Elec... | 1.91 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W987D2HBJX6E TR | Winbond Elec... | 1.72 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
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