
Allicdata Part #: | W988D2FBJX6E-ND |
Manufacturer Part#: |
W988D2FBJX6E |
Price: | $ 2.23 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 256M PARALLEL 90VFBGA |
More Detail: | SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Par... |
DataSheet: | ![]() |
Quantity: | 1000 |
240 +: | $ 2.02786 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPSDR |
Memory Size: | 256Mb (8M x 32) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 90-TFBGA |
Supplier Device Package: | 90-VFBGA (8x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction to W988D2FBJX6E
The W988D2FBJX6E is a type of memory device which is used to store data in a very safe and secure fashion. This device is popular because it is highly reliable and has a very high data density. Additionally, the W988D2FBJX6E has a low power consumption rate, making it a suitable choice for many applications where power conservation is a priority.
Application Field of W988D2FBJX6E
The W988D2FBJX6E is suitable for a wide range of applications. It can be used in mobile phones and other portable devices to store data. The W988D2FBJX6E is also popular for its use in embedded systems, as it is a very efficient way to store data for PLC, robots and other such systems. In addition, W988D2FBJX6E is commonly used in data communication devices for its high speed data transfer capabilities. Finally, it can also be used in data storage systems for large-scale storage of data.
Working Principle of W988D2FBJX6E
The W988D2FBJX6E is based on NAND flash technology. It uses a non-volatile cell that can store data even when power is turned off. Each cell can store two bits of data, which means that two bits can be stored in each cell. The data is stored in cells, and the memory device is divided into blocks of cells, so that data can be stored and retrieved in an efficient manner.
The W988D2FBJX6E memory device can operate in two modes, namely the page mode and the block mode. In page mode, the memory device can store and read one page at a time, which means that it can access one page at a given time. In block mode, the device can access whole blocks at once and can write and read multiple pages simultaneously. This makes the device highly efficient in random access operations.
The W988D2FBJX6E memory device is highly reliable and is resistant to various environmental conditions. Additionally, it has a very low power consumption rate, making it suitable for most applications. It is also quite fast, which makes it suitable for data communication applications. It is also very durable, as its cells can retain data even after thousands of erase/write cycles.
Conclusion
The W988D2FBJX6E is a type of memory device that is used in a wide range of applications. It is based on NAND flash technology and has a low power consumption rate, making it a suitable choice for many applications. Additionally, it has a very high data density and is highly reliable. Finally, it can operate in two modes, namely page mode and block mode, making it suitable for random access operations.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
W988D2FBJX6E TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W988D6FBGX6I | Winbond Elec... | 2.18 $ | 1000 | IC DRAM 256M PARALLEL 54V... |
W988D6FBGX7E | Winbond Elec... | 2.18 $ | 1000 | IC DRAM 256M PARALLEL 54V... |
W988D6FBGX6E | Winbond Elec... | 2.18 $ | 1000 | IC DRAM 256M PARALLEL 54V... |
W988D6FBGX7E TR | Winbond Elec... | 2.02 $ | 1000 | IC DRAM 256M PARALLEL 54V... |
W988D6FBGX6E TR | Winbond Elec... | 2.02 $ | 1000 | IC DRAM 256M PARALLEL 54V... |
W988D2FBJX6I | Winbond Elec... | 2.23 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W988D2FBJX7E TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W988D6FBGX6I TR | Winbond Elec... | 2.02 $ | 1000 | IC DRAM 256M PARALLEL 54V... |
W988D2FBJX6E | Winbond Elec... | 2.23 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W988D2FBJX6I TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W988D2FBJX7E | Winbond Elec... | 2.23 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
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