Allicdata Part #: | W988D2FBJX6I-ND |
Manufacturer Part#: |
W988D2FBJX6I |
Price: | $ 2.23 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 256M PARALLEL 90VFBGA |
More Detail: | SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Par... |
DataSheet: | W988D2FBJX6I Datasheet/PDF |
Quantity: | 1000 |
240 +: | $ 2.02786 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPSDR |
Memory Size: | 256Mb (8M x 32) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 90-TFBGA |
Supplier Device Package: | 90-VFBGA (8x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is the science of storing and retrieving information. A memory device is typically a format of digital storage specifically designed to store data and information. W988D2FBJX6I is an example of one such memory device and its applications and working principles are described in detail below.
Applications of W988D2FBJX6I
W988D2FBJX6I is a form of electrically erasable programmable read-only memory (EEPROM). EEPROM provides non-volatile memory storage, meaning that it is able to retain stored information even when power is not applied. This makes it ideal for use in applications requiring non-volatile data storage such as automotive, industrial, and medical. It can be used to store critical data such as engine control unit settings and medical instrument calibration information, among other things. In addition, EEPROMs are also widely used as a programming device for microcontroller-based systems, such as embedded systems and robotics.
Working Principle of W988D2FBJX6I
W988D2FBJX6I is based on the Flash EEPROM structure. Flash EEPROMs structure is comprised of transistors and capacitors, which are connected in a grid-like structure. Each cell within the grid is capable of storing one bit of information. Data stored in the memory is erased when a high voltage pulse is applied to the gate of each cell. In order to write data to the memory, a low voltage pulse is used. As the gates are charged, electrons are stored and collected on a lower part of the transistor, which is connected to the capacitor. When there\'s insufficient voltage, the electrons will be released to the gate and the cell will be discharged. Finally, the cells are read at a group of 16 at a time and then the result is combined together to form a byte of data.
Conclusion
W988D2FBJX6I is a type of memory device used in a variety of applications. Being a form of Flash EEPROM, it is well suited for applications that require non-volatile data storage and programming of microcontroller-based systems. Its working principle is based on the Flash EEPROM structure and involves the use of transistors and capacitors to store and erase data. With its wide range of applications and robust design, W988D2FBJX6I is a popular choice for memory solutions.
The specific data is subject to PDF, and the above content is for reference
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