YFZVFHTR12B Discrete Semiconductor Products |
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Allicdata Part #: | YFZVFHTR12BTR-ND |
Manufacturer Part#: |
YFZVFHTR12B |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | ZENER DIODES (CORRESPONDS TO AEC |
More Detail: | Zener Diode 11.74V 500mW ±2.51% Surface Mount TUMD... |
DataSheet: | YFZVFHTR12B Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05613 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11.74V |
Tolerance: | ±2.51% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 12 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 9V |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2M |
Description
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YFZVFHTR12B Diodes - Zener - Single Application Field and Working Principle
The YFZVFHTR12B diode is a single linear voltage-controlled zener diode developed to regulate electrical current for a variety of applications. This diode works on the principle of the break-down voltage, a zener diode\'s inherent ability to maintain a consistent voltage when it is exposed to an excess of electrical current.The YFZVFHTR12B diode is specially designed to be used in the design and manufacturing of digital circuits, particularly applications like switching power supplies and control systems, voltage regulators, static converters, and precision voltage detectors. Its superior stability and superior voltage control capabilities make it an attractive choice for use in commercial electrical applications.The zener effect of the YFZVFHTR12B diode is primarily dependent on the principle of carrier injection. This phenomenon occurs when an external voltage exceeds the diode\'s reverse breakdown voltage. A strong current, known as "avalanche current" is created, which pulls the electrons from the conduction band of the doped semiconductor material into the valence band. This activity causes a drop in the resistance and forward voltage of the diode, resulting in a regulated and constant output voltage.The YFZVFHTR12B diode also utilizes the principle of negative temperature coefficient of resistance. The diodes are designed such that their resistance output is dependent on the temperature of its environment, meaning that when the device is exposed to a warmer environment, the resistance of the diode increases and vice versa. This behavior means that the zener effect can be further regulated to accurately control the output voltage.The YFZVFHTR12B diode exhibits a range of forward voltage drop which is between 1.2 and 3.7 V. As mentioned earlier, this voltage is dependent on the temperature of the environment and can be accurately regulated to ensure that the output supply remains consistent. The reverse leakage current of the device is approximately 0.1 μA. The zener voltage regulation of this device is 12V ±5%. In terms of power dissipation, the device can withstand a maximum of 200 mW and a maximum of 1A for the maximum power dissipation. The YFZVFHTR12B diode is fairly popular in electronic circuitry and is available from many electronic component suppliers. Its various characteristics and operating behaviors make it a great choice for applications which demand specific voltage regulation and precise output power.The specific data is subject to PDF, and the above content is for reference
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