ZHB6792TC Allicdata Electronics
Allicdata Part #:

ZHB6792TC-ND

Manufacturer Part#:

ZHB6792TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN/2PNP 70V 1A SOT223
More Detail: Bipolar (BJT) Transistor Array 2 NPN, 2 PNP (H-Bri...
DataSheet: ZHB6792TC datasheetZHB6792TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 1.25W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223
Base Part Number: ZHB6792
Description

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The ZHB6792TC is a bipolar junction transistor (BJT) array. It is an integrated circuit that contains multiple BJT transistors, each electrically connected to the same common residential ground and composed of a base (B), collector (C), and emitter (E). It is typically used in electronic switching devices and amplifier circuits, including radio frequency (RF), audio and power amplifiers, and also often applied as a driver for switching relays and solenoids.

This type of BJT array includes two different types of transistors, NPN, and PNP. NPN transistors have negative-positive-negative charges at their terminals, while PNP transistors have positive-negative-positive charges. Additionally, it should be noted that the ZHB6792TC also has a symmetrical structure, allowing it to be used in both switching and amplifier applications.

The main principle behind a BJT array is that it provides reversed biasing of the collector-base junction of a BJT through the voltage applied to its base. This reverse biasing increases the collector-base junction’s resistance, preventing current from flow, effectively locating the transistor in cut-off. Additionally, a BJT array also provides enhanced gain by amplifying the current of each individual transistor. This can be beneficial in audio and power amplifier applications as well as RF applications.

In RF applications, BJT arrays help form the antenna circuit, which is essential for receiving high-frequency signals. By positioning more transistors with increased gain, the device can create a more robust and broad-spectrum antenna circuit, providing higher-order sensitivity. Additionally, BJT arrays help reduce the risk of oscillations, which can interfere with signals.

In audio and power amplifier applications, BJT arrays help manage current flow, which can help reduce cross-talk and improve sound clarity. Furthermore, BJT arrays can be employed in switching circuits, providing robust and reliable switching operations. In the case of the ZHB6792TC, the array provides four transistors capable of controlling the flow of up to 20 amps at 45 volts, making them suitable for both switching and amplifier applications.

Overall, the ZHB6792TC is a high-performance BJT array that is suited for both RF and audio amplifier applications. It can help provide increased gain, reduce cross-talk, increase sound clarity, while also controlling current flow in switching circuits. Thus, it can be used in a wide array of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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