ZM4735A-GS18 Allicdata Electronics
Allicdata Part #:

ZM4735A-GS18-ND

Manufacturer Part#:

ZM4735A-GS18

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 6.2V 1W DO213AB
More Detail: Zener Diode 6.2V 1W ±5% Surface Mount DO-213AB
DataSheet: ZM4735A-GS18 datasheetZM4735A-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05639
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 3V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Description

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Diodes, otherwise known as valves, are electrical components that are used to control current or voltage in an electronic circuit. Zener diodes in particular are special, non-linear diodes designed for voltage regulation and clipping of high voltage or high power signals. The ZM4735A-GS18 is a single, planar semiconductor device of Silicon epitaxial construction. It uses avalanche technology to achieve zener breakdown voltages between 12.2–16.8 volts.

The ZM4735A-GS18 has a wide range of applications in switching applications, rectifiers, filters and voltage handling circuits, where high breakdown voltage and low leakage current are desired. It is suitable for both military and commercial grade applications. It is also used in circuits needing noise-free operation, voltage reference circuits and document imaging systems.

The working principle of the ZM4735A-GS18 is based on the avalanche effect, which occurs when electrons are injected into the depletion layer of a diode and accelerated by the electric field in the depletion layer. This avalanche effect can cause electrons to gain enough energy that they can ionize molecules in the depletion layer. This creates a chain reaction of additional electrons and ions, resulting in a sharp increase in current through the diode. The ZM4735A-GS18 is designed to exploit this effect to achieve its breakdown voltage. Once the breakdown voltage is achieved, the diode conducts current freely until the voltage is reduced below the breakdown voltage.

The ZM4735A-GS18 also features low dynamic impedance, allowing it to be used in RF applications that require low gate capacitance. It also has low leakage current and low thermal noise, making it suitable for high-sensitivity applications such as document imaging systems. The device’s low breakdown voltage is also beneficial in some applications, as the device can be designed for use in circuitry that must be both reliable and economical.

In conclusion, the ZM4735A-GS18 is a versatile and reliable device that can be used in a wide range of applications. Its many features make it suitable for both military and commercial grade applications, and its low breakdown voltage allows it to be used in circuits that need to be both reliable and economical. Its low leakage current and low thermal noise make it suitable for high-sensitivity applications, while its low dynamic impedance allows it to be used in RF applications.

The specific data is subject to PDF, and the above content is for reference

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