ZM4739A-GS08 Discrete Semiconductor Products

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Introduction

ZM4739A-GS08 is a single Zener diode component designed for protection, level shifting and voltage clamping applications. It is designed with a reverse breakdown voltage of 8V and a low dynamic impedance when operated in reverse breakdown mode. The component has an operating temperature range of -55°C to +125°C and is available in a small 3-pin SOT-23 package.

Application Fields

The ZM4739A-GS08 component is primarily used for protection and level shifting applications. This component can be used for overvoltage protection of electrical and electronic circuits. It is also useful for preventing damage to systems and circuits due to excessive voltage or current. In addition, the component can be used for level shifting and voltage clamping to protect circuits from voltage or current overshoot.

Working Principle

The ZM4739A-GS08 component operates through the principle of avalanche breakdown. It consists of a reverse biased PN junction diode where the electric field strength is strong enough to cause the thin depletion layer of the junction to breakdown. Avalanche breakdown occurs when the junction creates an electric field. As the electric field strength increases, the current of the junction increases exponentially. This increase in current causes an increase in voltage which further reduces the thin depletion layer of the junction.

When the junction is reverse biased, the electric field strength is increased beyond the breakdown voltage and the current of the junction increases exponentially. The voltage at which breakdown occurs is known as the reverse blocking voltage of the device. In the case of the ZM4739A-GS08 component, its reverse blocking voltage is 8V. The device has a low dynamic impedance when operating in avalanche mode which allows it to maintain a near constant voltage even as the current through the device changes.

Conclusion

The ZM4739A-GS08 component is a single Zener diode component designed for protection, level shifting and voltage clamping applications. It has a reverse breakdown voltage of 8V and a low dynamic impedance when operated in reverse breakdown mode. It is mainly used for protection and level shifting applications, with its avalanche breakdown operating principle to allow it to maintain a near constant voltage even as the current through the device changes.

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