ZMV830BTA Allicdata Electronics

ZMV830BTA Discrete Semiconductor Products

Allicdata Part #:

ZMV830BTR-ND

Manufacturer Part#:

ZMV830BTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE VARACTOR 25V HYPER SOD-323
More Detail: Varactor Single 25V Surface Mount SOD-323
DataSheet: ZMV830BTA datasheetZMV830BTA Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Capacitance @ Vr, F: 10.5pF @ 2V, 1MHz
Capacitance Ratio: 6
Capacitance Ratio Condition: C2/C20
Voltage - Peak Reverse (Max): 25V
Diode Type: Single
Q @ Vr, F: 300 @ 3V, 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Base Part Number: ZMV830
Description

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The ZMV830BTA is a variable capacitance diode, commonly known as a Varicap or Varactor, within the family of diodes. It is a two-terminal semiconductor device which is used to modulate the capacitance parameters of a circuit. The device has a wide range of applications from television tuner circuits, to receivers, to oscillators, RF amplifiers, filters, and beyond.

In terms of the details of the ZMV830BTA itself, it measures a maximum of 5.0 voltage in reverse bias (Vr) and is available in three ranges: typical (Vr=5.0 V) minimal (Vr=3.5 V), and maximum (Vr=7.2 V). The capacitance-voltage characteristics of the device have a linear slope of ?2.0 pF/V and a reverse voltage of 5.0V. It also has a temperature coefficient of ?3.0ppm/°C and an optimised electrical linearity. The ZMV830BTA is designed for use in high frequency radio equipment with a wide range frequency range that extends to 2.5GHz.

The working principle of the ZMV830BTA is a straightforward one. When a voltage is applied across the device, this will create a net electric field across the junction between the n-type and p-type regions. This causes “tunneling” of electrons from n-type to p-type regions and creates a capacitance which can be modulated or adjusted by the application of a reverse bias voltage. The ZMV830BTA is designed to have a linear capacitance vs. reverse bias voltage response. This property makes it possible for the device to be used for applications such as RF frequency tuning, variable gain control, and other tasks for which the variable response of the device is required.

The variable capacitance of the device is used in a wide range of applications, where it provides the flexibility of adjustable capacitance. It can be used in television tuners to provide correct sound and picture quality by selecting the correct channel for the user. It can also be used in receivers, where it is suitable for RF gain control and circuit tuning, as well as for modulating the audio and video signals before being sent to the television. It can also be used in oscillators to control the frequency of the signal produced, or to create a stable frequency. The device is also used in filters, where it offers both low insertion loss and high-Q performance.

The ZMV830BTA is also used in RF amplifiers, to enable the user to adjust the gain of the signal, as well as to modulate frequency hops, detect frequencies, and reduce cross-talk between signals. The device is also extensively used in communication systems, where it provides a low power method of transmitting information over long distances. It is also used in GPS systems to determine the exact location of a user.

In summary, the ZMV830BTA is a versatile two-terminal semiconductor device that serves to modulate the capacitance of a circuit. It is used in a wide range of radio equipment, from television tuners and receivers, to oscillators and filters, as well as RF amplifiers, communication systems, and GPS systems. The principle of operation of the device is based on “tunneling” of electrons, and the resulting capacitance-voltage characteristics provide for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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