ZPY36-TR

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ZPY36-TR is a silicon diffusion zener diode housed in a miniature, hermetically sealed, DO-35 package. This diode was conceived to be used in higher-temperature, harsh-environment applications, including high-frequency switching circuits, such as in radar and communications devices. The construction of the ZPY36-TR is composed of a submicron chip of silicon with a very thin layer of an N-type semiconductor on top. This layer of the N-type semiconductor mixes with the P-type layer beneath it to form an avalanche effect that controls the breakdown voltage of the diode. This layer is called the “guard ring.”

The guard ring, along with the monolithic structure of the diode, greatly improves the operating range and will not cause any parasitic effects. With such a small size, ZPY36-TR also has a very low-capacity rating, making it ideal for high-frequency applications. The ZPY36-TR also has a low reverse current, giving it a higher switching speed. To reduce power dissipation, it also has a low forward voltage, providing a greater efficiency and better operation.

The ZPY36-TR also has an optimized thermal resistance to reduce circuit temperature buildup. The devices have been tested to ensure they can operate at temperatures ranging from -20 to 150 degrees Celsius. The device also has a very tight tolerance of ±2%, making it incredibly precise. The devices have also gone through rigorous testing to ensure their stability for years of use.

The ZPY36-TR diode can be used in variety of applications, including audio and power circuits, RF switching, and semiconductor triggering. Due to its low leakage current and its ability to maintain a very precise voltage throughout its lifetime, the ZPY36-TR is ideal for sensitive circuits such as those used in medical equipment and test instrumentation. The ZPY36-TR is also perfect for high-powered LED lighting or for controlling supersonic transducers used in medical imaging.

The working principle of the zener diode is the same irrespective of what diode it is. It works by relying on the breakdown voltage of the diode. The zener voltages are created by the bandgap voltage of the junction. When a voltage across the diode is greater than the zener breakdown voltage, a large current will flow through the diode, creating a stable circuit which maintains the voltage at a fixed level. This voltage is known as the Zener voltage.

When reversed biased, the ZPY36-TR diode performs similarly to other conventional zener diodes. The diode has an adjustable breakdown voltage that can be set according to the circuit needs. When the reverse voltage across the diode is increased above the zener breakdown voltage, the current begins to flow through the ZPY36-TR diode in an avalanche effect. This allows the voltage to remain constant while the current flow increases. This current flow is limited by the value of the Zener resistance.

The ZPY36-TR diode has several advantages over conventional zener diodes. Not only is it very precise but it also requires very low forward voltage, making it more efficient and reliable. Furthermore, its hermetically sealed construction makes it suitable for use in harsh environments. On top of that, its small size allows for high-density mounting on circuit boards and its optimized thermal resistance prevents overheating.

In conclusion, the ZPY36-TR diode is a high-precision, hermetically sealed, diffusion type zener diode. It is ideal for applications that require an adjustable breakdown voltage and can operate in a wide range of temperatures. It is also highly efficient, reliable, and suitable for high-density mounting.

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