Allicdata Part #: | ZPY51-TR-ND |
Manufacturer Part#: |
ZPY51-TR |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 51V 1.3W DO41 |
More Detail: | Zener Diode 51V 1.3W ±5% Through Hole DO-41 |
DataSheet: | ZPY51-TR Datasheet/PDF |
Quantity: | 1000 |
25000 +: | $ 0.03275 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 51V |
Tolerance: | ±5% |
Power - Max: | 1.3W |
Impedance (Max) (Zzt): | 45 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 38V |
Operating Temperature: | 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
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ZPY51-TR is a single Zener diode made available from ROHM Semiconductor. It is designed for use in various types of applications and circuits requiring a low forward voltage, fast switching, or low noise. It is suitable for use in applications such as DC-DC converters, voltage regulators, and power supplies. In this article, we will discuss the application field and working principle of the ZPY51-TR.
Application Field
The ZPY51-TR is a commonly used diode in both AC/DC and DC/DC circuits. Its application field is wide, from automotive to industrial and consumer applications. It has a low leakage and ultra-fast switching, making it suitable for voltage regulator, DC-DC converter, and power application. It is also used for voltage clamping in high-voltage applications, as it can withstand little to zero current.
Other applications include input rectifying circuits, over-voltage protection, over-current protection, and RF (radio frequency) protection. Its flexibility in terms of current and voltage handling makes it a popular choice in both DC and AC circuitry.
Working Principle
A Zener diode operates on the principle of avalanche breakdown. This occurs when the electrical field inside the junction of the diode increases to a point where electrons and holes form an avalanche. This rapidly increases the current flow through the junction, allowing the voltage to stay constant. This effect is dependent on the polarity of the applied voltage.
In the case of the ZPY51-TR, the diode is made from a P-type semiconductor substrate. The N-type junction is located on the underside of the substrate. When a forward voltage is applied to the diode, no current will flow until it reaches a certain breakdown voltage, whereupon the avalanche effect occurs. This breakdown voltage is a controllable parameter, thereby giving the diode its ability to regulate the voltage.
When operating in reverse bias, the ZPY51-TR exhibits very little current leakage, making it well suited for power supply applications. However, due to the avalanche effect, the diode can suffer from significant power dissipation if operated in the forward bias state.
In conclusion, the ZPY51-TR is a versatile single Zener diode that can be used in a wide range of applications. Its low forward voltage, fast switching, and low noise performance make it a suitable choice for voltage regulator, DC-DC converter, and power applications. The diode operates on the principle of avalanche breakdown, meaning it can withstand an overload of current and maintain a constant voltage. The ZPY51-TR is a reliable source of power for any circuit or application.
The specific data is subject to PDF, and the above content is for reference
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