ZPY9V1-TAP Allicdata Electronics
Allicdata Part #:

ZPY9V1-TAP-ND

Manufacturer Part#:

ZPY9V1-TAP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 9.1V 1.3W DO41
More Detail: Zener Diode 9.1V 1.3W ±5% Through Hole DO-41
DataSheet: ZPY9V1-TAP datasheetZPY9V1-TAP Datasheet/PDF
Quantity: 1000
25000 +: $ 0.03275
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 9.1V
Tolerance: ±5%
Power - Max: 1.3W
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 7V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Description

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A ZPY9V1-TAP diode is a single silicon, low-leakage, low-voltage zener diode designed for use in various applications. It is designed to provide reverse-bias and regulated-current protection for most electrical and electronic devices. It is also used in other applications where a regulated voltage is needed. The device is optimized for low voltage operations up to 9V.

The ZPY9V1-TAP has a wide range of application fields and working principles. In automotive and power electronics, it can be used as a zener diode for protecting devices from reverse voltage as well as a current limit diode. In various industrial control applications, it can be used as a positive temperature coefficient (PTC) device to increase current limit in the event of a external fault condition. It can also be used to control the maximum voltage of a linear voltage regulator, to control the operating pulsing of a switched-mode power supply, and to limit the current in a novel electrical circuit.

The working principle of the ZPY9V1-TAP is based on its unique characteristics. It consists of a thin layer of aluminum-doped silicon, which is connected to a substrate with two electrodes. When a voltage is applied to the device, it enters into the Zener breakdown region. In the Zener region, the electric field in the thin layer of the aluminum-doped silicon increases and a conductive channel is formed, leading to an increase in current. As the voltage increases, the current also increases, until it reaches the breakdown voltage, which is the maximum voltage that the diode can handle.

The ZPY9V1-TAP has a wide range of features that make it suitable for various industrial and home applications. It is a low-voltage device that has an operating temperature range of -55℃ to 125℃ and is highly reliable in providing stable regulation of current. It is also equipped with reverse-biased protection to prevent the device from being damaged by lightning surges and other transient events. Its silicon body also helps to reduce thermal stress and minimize vibration in automotive and industrial applications.

The ZPY9V1-TAP is an excellent choice for various applications requiring reverse-voltage protection and current-limiting features. It is suitable for use in home, automotive, industrial, and many other applications. Its robust design ensures high reliability and consistent performance for a wide range of operating temperatures and conditions. With its unique characteristics and wide range of applications, the ZPY9V1-TAP is easily one of the best low-voltage zener diodes available on the market.

The specific data is subject to PDF, and the above content is for reference

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