ZSPM4011BA1W33

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ZSPM4011BA1W33 is a power field effect transistor (FET) made from a silicon-based material. It is typically used for applications where high power, high frequency switching is needed. The FET works by controlling the flow of electrical current through a channel between two terminals when a voltage is applied to the gate of the transistor. This allows for a wide variety of applications, from low-level DC switching to high-power switching applications like switching power supplies or motor controls. It can also be used for amplifier applications, as it provides an effective voltage gain for its size and power consumption.

The ZSPM4011BA1W33 is a power field effect transistor with a nominal operating voltage of 400V. It is an N-Channel FET with an IDSS rating of 30A max. It has a maximum power dissipation of 1W and is housed in a 4-Lead TO-220 package. The ZSPM4011BA1W33 is capable of operating up to 175C with an ambient temperature of 25C. It has an on-resistance of 1.2 ohms and a breakdown voltage of 400V.

The ZSPM4011BA1W33 is a versatile device with a wide range of applications. It can be used for DC-to-DC conversion, motor control, voltage regulation, frequency control, switching power supplies, and amplifier applications. It is also suitable for pulse power applications, such as inverters and converters. Additionally, its high speed operation can be used in medical applications and high-frequency switching circuits.

The ZSPM4011BA1W33 is a power FET which has a working principle based on the basic principles of field effect transistors. In this type of transistor, current flow is controlled by an electric field applied to the gate of the transistor. A FET consists of a gate, a source, and a drain. When a voltage is applied to the gate, the transistor acts like a switch, turning on or off depending on the direction of the applied voltage and the type of transistor. The FET can be thought of as a field-controlled threshold switch, where an applied voltage is used to control the flow of current.

In a typical application for the ZSPM4011BA1W33, the gate voltage is applied to control the current flow between the source and the drain. The gate voltage can be an analog signal or a digital signal, depending on the required application. A low voltage will switch the device off, while a larger voltage will turn it on. The current flow between the source and the drain is controlled by the gate voltage and is proportional to the applied voltage. This makes the ZSPM4011BA1W33 especially well suited for applications where a variable current is required, such as in adjustable motor controllers.

The ZSPM4011BA1W33 is an effective power FET with a wide range of applications. Its high power and temperature capabilities make it suitable for a variety of switching and amplifier applications. Its ability to control the current flow between the source and the drain with an applied voltage make it especially useful for pulse power applications, such as inverters and converters.

The specific data is subject to PDF, and the above content is for reference