ZSSC4165DE1C Allicdata Electronics
Allicdata Part #:

ZSSC4165DE1C-ND

Manufacturer Part#:

ZSSC4165DE1C

Price: $ 1.75
Product Category:

Uncategorized

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: DICE (WAFER SAWN) - FRAME
More Detail: N/A
DataSheet: ZSSC4165DE1C datasheetZSSC4165DE1C Datasheet/PDF
Quantity: 1000
4730 +: $ 1.59201
Stock 1000Can Ship Immediately
$ 1.75
Specifications
Series: *
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ZSSC4165DE1C is a type of semiconductor device widely used in a variety of applications across multiple industries. This particular type of semiconductor device is the first of its kind, and as such, it offers numerous benefits to market applications in both the analog and digital domains. This article outlines the basic principles of ZSSC4165DE1C and its application field.

The ZSSC4165DE1C is a deep-depletion channel field-effect transistor (FET) chip developed by Zettastructure Inc. The core principle of this FET can be best explained as a power source that can be manipulated by voltage or current. This allows this type of semiconductor device to be used in many applications as an electronic logic gate. In fact, the ZSSC4165DE1C is a highly efficient and cost-effective choice for many applications when compared to other semiconductor devices.

In addition to being used as a logic gate, ZSSC4165DE1C can be used in a number of other applications, such as in power amplifiers, RF switches, analog transducers and other input/output related applications. The ZSSC4165DE1C also has the capability to operate in both the analog and digital domain, which makes it highly versatile and efficient. It also has the benefit of being highly efficient, as, unlike some other types of FET chips, it does not require additional power supply for its operation.

The ZSSC4165DE1C utilizes a high-performance silicon on insulator (SOI) technology, which enables high-speed performance. This type of technology also reduces power consumption, as it has a lower gate capacitance when compared to conventional FETs, thus reducing heat generation. The ZSSC4165DE1C is capable of operating at a high frequency of up to 2.4 GHz. It is also capable of performing with minimal signal glitches and has a wide operating temperature range. Furthermore, the ZSSC4165DE1C is highly reliable, and is designed to withstand a range of environments and impacts.

The working principle of the ZSSC4165DE1C is relatively simple and can be summed up as follows. At the heart of the device is a field-effect transistor (FET). This FET is connected to a voltage reference in a configuration known as the “source-follower”. In this arrangement, the FET acts as a switch, while the voltage reference holds the voltage at a constant level. When an external voltage is applied to the FET, it alters the internal voltage of the device, and this change is detected by the voltage reference. In turn, this allows the device to switch on and off, as required.

The ZSSC4165DE1C can be widely used in both the industrial and consumer sectors. In the industrial context, it can be used as a switch or controller in industrial environment control systems, while in the consumer context it can be used in a variety of applications such as audio and image processing, digital signal processing, and portable electronic device management. In terms of communication, the ZSSC4165DE1C is also suitable for use in radio communication and power line transmission systems.

Due to the multiple advantages it offers, the ZSSC4165DE1C is a preferred choice for many applications. From its low power operation to its high-performance characteristics, the ZSSC4165DE1C offers a wide range of possibilities for many different sectors. With its robust design, reliable operation, and competitive cost, the ZSSC4165DE1C is sure to be seen as a favored option for many years to come.

The specific data is subject to PDF, and the above content is for reference

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