ZTX325

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	1.3GHz
Noise Figure (dB Typ @ f):	5dB @ 500MHz
Gain:	53dB
Power - Max:	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 2mA, 1V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3
Supplier Device Package:	E-Line (TO-92 compatible)
Base Part Number:	ZTX325

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ZTX325 is a high-frequency small signal NPN bipolar transistor. It is designed to work in RF applications and operates with a forward current gain of 300 at a frequency of 5GHz. The ZTX325 is classified as a Type 2 bipolar transconductance device, with a collector-base reverse bias and a large transconductance. It operates in either common-source or common-collector configurations, and is suitable for use in high-power applications.The ZTX325 has a collector-emitter voltage rating of 40V, a collector-base voltage rating of 40V, and a collector current rating of 0.5 mA. The ZTX325 has an excellent gain-bandwidth product of 8GHz, making it suitable for high-speed applications. It features a low noise of 2dB, allowing it to be used in sensitive applications. It also has a high frequency range of 3GHz to 6GHz.The ZTX325 is designed for use in applications requiring low power, high gain, and high frequency performance. It is suitable for RF receiver and transmitter applications, such as amplifier levels, attenuators, and oscillators.The ZTX325 utilizes a current conduction technique known as bipolar switching. In bipolar switching, the base and collector terminals of the device are switched in order to create current in the base-emitter junction. This current flows between the base and the collector upon switching, creating a voltage potential between the collector and emitter. As the voltage between the collector and the emitter increases, the device activates current conduction.The ZTX325 uses the charge coupling action of the base current collector to minimize base-emitter delay time and therefore, increase device switching speed. This technique also results in lower losses associated with the device, resulting in improved device efficiency. The ZTX325 has a minimum switching speed of 35ns and a maximum operating temperature of 175°C, making it suitable for high-speed applications.The ZTX325 is an ideal solution for high-frequency applications. Its low power, high gain, and high frequency performance make it suitable for a wide range of RF applications. Additionally, its charge coupling action ensures fast switching speeds and low power losses, making it an energy-efficient device. Its small size also makes it an ideal choice for space- constrained applications. Overall, the ZTX325 is an excellent choice for RF applications that require high-frequency performance and high gain. Its low power, high gain, and high frequency make it an ideal choice for a wide range of RF applications. Its charge coupling action also makes it an energy-efficient device, resulting in improved device efficiency. Its small size also makes it ideal for space-constrained applications.

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