ZTX325STZ Allicdata Electronics
Allicdata Part #:

ZTX325STZ-ND

Manufacturer Part#:

ZTX325STZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANSISTOR RF NPN E-LINE
More Detail: RF Transistor NPN 15V 50mA 1.3GHz 350mW Through Ho...
DataSheet: ZTX325STZ datasheetZTX325STZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 5dB @ 500MHz
Gain: 53dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX325
Description

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The ZTX325STZ is a high-performance NPN transistor used for RF applications. It is a small signal bipolar junction transistor (BJT) and is suitable for audio amplifiers, low-frequency amplifier circuits and various low-power circuits. The transistor is made with high-quality materials, making it an ideal choice for many industrial applications, such as switching and modulator circuits.

The ZTX325STZ is designed to be a high-performance, low-power device. It has low turn-on voltage, high gain, and high current output, making it suitable for radio frequency (RF) applications. Due to its low-power characteristics, the transistor has a low quiescent current, meaning the transistor has a low operating power dissipation. The transistor also has excellent thermal stability and can be used in temperature critical environments.

The ZTX325STZ is a NPN type transistor. It has a collector-emitter breakdown voltage of 45V, an emitter-base voltage of 6.2V and a collector-base voltage of 60V. The current gain of the transistor is typically 160, and the maximum collector current is 90mA. The transistor also has a gain bandwidth product of 160MHz.

The ZTX325STZ works on the principle of electron flow. The base of the device is connected to a control current or voltage. This current or voltage controls the flow of electrons through the device. When the base current or voltage is increased, the current flow through the transistor increases, resulting in increased output current. Conversely, when the base current or voltage is decreased, the current flow through the transistor decreases, resulting in decreased output current.

The ZTX325STZ is widely used in a variety of applications, including audio amplifiers, FM radio modulators, switching power supply circuits, and low-frequency amplifier circuits. The transistor can also be used for low-power amplifier stages and RF amplifiers. The ZTX325STZ is a good choice for applications that require low power dissipation, high gain, and high current output.

Overall, the ZTX325STZ is a high-performance NPN bipolar junction transistor designed for RF applications. The transistor has excellent thermal stability, high gain, and low turn-on voltage, making it an ideal choice for many applications. With its reliable performance and low power dissipation, the ZTX325STZ makes an excellent choice for RF amplifiers and many other circuits.

The specific data is subject to PDF, and the above content is for reference

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