ZUMTS17HTA Discrete Semiconductor Products |
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Allicdata Part #: | ZUMTS17HTR-ND |
Manufacturer Part#: |
ZUMTS17HTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANSISTOR RF NPN SC70-3 |
More Detail: | RF Transistor NPN 15V 25mA 1.3GHz 330mW Surface Mo... |
DataSheet: | ZUMTS17HTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1.3GHz |
Noise Figure (dB Typ @ f): | 4.5dB @ 500MHz |
Gain: | -- |
Power - Max: | 330mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 2mA, 1V |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | ZUMTS17 |
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The ZUMTS17HTA is a type of transistor which falls under the Bipolar Junction Transistor (BJT) family, primarily used in Radio Frequency (RF) applications. These transistors are ideal for high frequency applications due to their impressive gain and stable characteristics. This article will cover the application field and working principles of the ZUMTS17HTA.
The applications of the ZUMTS17HTA typically include transmitter, linear amplifier, and local oscillator designs. These transistors are highly durable and reliable in these types of system environments, making them an ideal replacement for other BJT transistors. The ZUMTS17HTA also has a wide operating temperature range, making it suitable for a variety of applications.
The ZUMTS17HTA is comprised of an NPN silicon die which is set in a molded plastic package. The die has a gate, base and emitter which are used to control the transistor flow. In order to operate, the base of the transistors must be biased to turn the transistor on. When biased, the transistor acts as a closed switch, allowing current to flow. When the base is not biased, the transistor acts as an open switch, not allowing current flow.
The ZUMTS17HTA is capable of impressive frequency bandwidths and gain, making it well-suited to high frequency applications. In addition, the transistors have a high level of stability and reliability. These features make the transistor an ideal choice for use in radio frequency applications.
The ZUMTS17HTA also has other features which make it a great choice for RF applications. The transistors have a low power consumption, making them suitable for use in battery powered devices. The ZUMTS17HTA also has a fast circuit switching speed, allowing for quick and efficient switching of signals.
The working principles of the ZUMTS17HTA are based on the same principles of all BJT transistors. These transistors are formed when a P-type and N-type semiconductor material are joined together. The junction of these two materials is known as the base. When a voltage is applied to the base, electrons from the N-type material flow to the P-type material, creating a current flow. This current flow is controlled by applying a voltage to the base, allowing current to flow or blocking it.
In conclusion, the ZUMTS17HTA is an ideal transistor for use in RF applications. The transistors have impressive gain and frequency bandwidths, making them a great choice for high frequency designs. In addition, the ZUMTS17HTA also has a low power consumption and fast switching speed. These features combined with the reliable and durable nature of the transistors makes them an ideal selection for radio frequency designs.
The specific data is subject to PDF, and the above content is for reference
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