Allicdata Part #: | ZUMT491TC-ND |
Manufacturer Part#: |
ZUMT491TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 1A SC70-3 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 500mW Surface... |
DataSheet: | ZUMT491TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | ZUMT491 |
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The ZUMT491TC is an excellent example of a single bipolar transistor, which are often used in applications that require a high level of reliability and low power consumption. This transistor has a wide range of applications, and is used in a variety of devices, from radio receivers to medical equipment. As such, it is an important component to understand and has a unique working principle.
Overview of the ZUMT491TC Bipolar Transistor
The ZUMT491TC Bipolar Transistor is a small, three-port semiconductor device which produces current gains in the range of 30 to 60 when operated from a range of 0.1 to 1.2 V. It has a collector current of 300mA and an operating temperature range of -55 to +175 degrees Celsius. The device also features a low power dissipation of 32mW at a supply voltage of 5V. It is an excellent choice for applications that require high levels of reliability, safety and performance in a small package.
Working Principle of the ZUMT491TC Transistor
The ZUMT491TC works on the principle of current flow between two distinct circuits. It provides controllable current flow between its collector and emitter. These two distinct circuits are called the base and the emitter-collector junction. The base circuit consists of the transistor\'s base and its emitter connected to a voltage source. This voltage source is what will control the current flow by controlling the voltage applied to the base. On the other side of the transistor is the emitter-collector junction which conducts current between the collector and the emitter.
The ZUMT491TC current gain is also controlled by the base-emitter voltage. As this voltage is increased, the current gain will decrease. This behaviour is known as the "active region" and is the basis of this transistor. As base-emitter voltage decrease, the collector current will increase. This is a commonly seen behaviour of bipolar transistors in the active region.
ZUMT491TC Application Fields
The ZUMT491TC is an excellent choice for applications that require low-power, high reliability and limited current handling capability. This type of transistor is found in a wide range of applications, ranging from radio receivers to medical equipment. They are commonly used in switching applications, as they offer low power consumption and high operating currents. The device is also well-suited for analog applications such as amplifiers and drivers. This type of transistor is also advantageous for applications that require high voltage breakdowns, as the ZUMT491TC offers a breakdown voltage of 60V.
The ZUMT491TC can be used in common-emitter and common-collector configurations. When used in a common-emitter configuration, the collector current will increase, effectively amplifying the signal applied across the base-emitter junction. When used in a common-collector configuration, the collector-emitter voltage will decrease, resulting in less current flow through the device. This transistor is also well suited for use in both digital and analogue circuits.
Conclusion
In conclusion, the ZUMT491TC is an excellent example of a single bipolar transistor, which are often used in applications that require high levels of reliability and low power consumption. This transistor has a wide range of applications, and is used in a variety of devices. Its working principle is based on the flow of current through two distinct circuits, the base and the emitter-collector junction. With its low power consumption, high breakdown voltage and excellent performance, this device is an excellent choice for applications that require low power, high reliability and limited current handling capability.
The specific data is subject to PDF, and the above content is for reference
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