ZXT3M322TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXT3M322TR-ND |
Manufacturer Part#: |
ZXT3M322TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 40V 3A 3-MLP |
More Detail: | Bipolar (BJT) Transistor PNP 40V 3A 190MHz 3W Surf... |
DataSheet: | ZXT3M322TA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 370mV @ 250mA, 2.5A |
Current - Collector Cutoff (Max): | 25nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 1.5A, 2V |
Power - Max: | 3W |
Frequency - Transition: | 190MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-PowerSMD, Flat Leads |
Supplier Device Package: | 3-MLP/DFN (2x2) |
Base Part Number: | ZXT3M322 |
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.The ZXT3M322TA is a single bipolar transistor device, used in an enormous range of applications primarily due to its versatility, high reliability and cost effectiveness. It has a variety of characteristics which make it the perfect choice for a multitude of tasks.
Application Fields
The ZXT3M322TA is able to handle a maximum continuous collector current of 16 A and peak collector current of 30 A, with a collector-emitter saturation voltage of 0.8V, meaning that it can be utilised in many different applications such as motor drivers, switching regulators, alarms, computer and telecom related devices, audio amplifiers and various consumer items.
Other applications for the ZXT3M322TA include general purpose switching circuits, small signal amplifiers and inverters, where small amounts of power are required. Being able to handle a max VCE of 600V means it can be used in power supply circuits as a main switch, enabling it to control the flow of large amounts of current with low saturation voltage.
Working Principle
Bipolar transistors, including the ZXT3M322TA, are made up of three layers of semiconductor material which are placed together in a specific order to create what is known as a junction. This junction, known as the base-emitter junction, controls the current flow between the two other layers which in this case is the base and collector layer. The resistance between the layers is determined by the amount of voltage applied to the junction.
When a small amount of voltage is applied, it causes the electrons in the base-emitter junction to be ‘forced’ across into the collector layers. This causes the resistance between these layers to decrease, allowing larger currents to flow easily. This is the standard ‘on’ state for the ZXT3M322TA, where the device is switched on and is allowing current to flow.
Once the applied voltage its removed, the junction reverts to its pre-applied condition, meaning that its resistance increases and no current can flow through the transistor. This is known as the ‘off’ state for the ZXT3M322TA, where its current carrying abilities are inactive and it has no affect on the current flow.
Conclusion
The ZXT3M322TA is a versatile, reliable and cost effective single bipolar transistor device with a variety of application fields. It has a maximum continuous collector current of 16 A, peak collector current of 30 A, and a collector-emitter saturation voltage of 0.8V. It is utilised in motor drivers, switching regulators, alarms, computer and telecom related devices, audio amplifiers and various consumer items, for general purpose switching circuits and small signal amplifiers, and for large power supply circuits. Its working principle involves the movement of electrons across its base-emitter junction, where the increase or decrease in resistance caused by the current determines its ‘on’ or ‘off’ state.
The specific data is subject to PDF, and the above content is for reference
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