ZXT849KTC Discrete Semiconductor Products |
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Allicdata Part #: | ZXT849KTR-ND |
Manufacturer Part#: |
ZXT849KTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 30V 7A D-PAK |
More Detail: | Bipolar (BJT) Transistor NPN 30V 7A 100MHz 4.2W Su... |
DataSheet: | ZXT849KTC Datasheet/PDF |
Quantity: | 5000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 280mV @ 350mA, 7A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
Power - Max: | 4.2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Base Part Number: | ZXT849 |
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The ZXT849KTC is a bipolar junction transistor, also referred to as a BJT, offering single transistor performance. This type of transistor utilizes n-type semiconductor materials for its three terminals, allowing current to flow between the collector and the emitter terminals. This model of transistor is capable of operating at a maximum collector-emitter voltage of 20 volts, making it suitable for a wide range of applications.
The ZXT849KTC has a variety of potential applications depending on the current amplification required by the application. In switching applications, it can be used as a fast switch due to its high current gain and fast switching times. It can also be used in amplifying applications; for example, in amplifying audio frequencies. Additionally, it can be used in power amplifiers, amplifying both high and low frequencies. Depending on the application, the ZXT849KTC can also be used in voltage regulators as an efficient and reliable solution.
As with any electrical device, the working principle of the ZXT849KTC involves the flow of electrons. The current that flows through the device is known as collector current; this current flows from the collector terminal to the emitter terminal. The current gain or amplification of the device is determined by the ratio of collector current to base current. The amount of current required to be supplied through the base terminal is minimal, allowing for efficient operation.
The base current is initially amplified through the transistor\'s base–emitter junction. The collector current is supplied by the collector–emitter junction, with the same current passing through the transistor\'s base–collector junction. In this way, the collector current passing through the device is amplified, allowing for efficient and reliable operation.
The ZXT849KTC is capable of operating at a maximum collector-emitter voltage of 20 volts. The current gain of the device is determined mainly by the current characteristics of the transistor and the external components used. The current gain is usually specified by the manufacturer as either the minimum or maximum current gain over a specified range of currents and temperatures, allowing for efficient operation.
The ZXT849KTC is effective and efficient when utilized in a variety of applications due to its high current gain and wide operating voltage range. With the variety of external components required in order to take advantage of the device\'s full performance, it is important to ensure that all components are compatible with the device and that they are correctly connected to the appropriate terminals.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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ZXT849KTC | Diodes Incor... | -- | 5000 | TRANS NPN 30V 7A D-PAKBip... |
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