Cap alum 68uf 20% 100v axial - Allicdata Electronics

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SIA472EDJ-T1-GE3

SIA472EDJ-T1-GE
3-ND

SIA472EDJ-T1-GE
3

Vishay Siliconix

View more Series: TrenchFET
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): 12V
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Power Dissipation (Max): 19.2W (Tc)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK SC-70-6 Single
Package / Case: PowerPAK SC-70-6

1000
Order

6000+:

$0.1093

SIA472EDJ-T1-GE3-ND Datasheet

SI5406DC-T1-GE3

SI5406DC-T1-GE3
-ND

SI5406DC-T1-GE3

Vishay Siliconix

View more Series: TrenchFET
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25C: 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs (Max): 8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET
Package / Case: 8-SMD, Flat Lead

1000
Order

1+:

$0

SI5406DC-T1-GE3-ND Datasheet

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