SIA472EDJ-T1-GE3

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SIA472EDJ-T1-GE3 Application Field and Working Principle

The SIA472EDJ-T1-GE3 is a power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) device, often included in the family of MOSFETs that came to be known as Super-High-Voltage (SHV) and Ultra-High-Voltage (UHV) transistors. These devices offer superior performance, control, and efficiency characteristics compared to their conventional counterparts. They are used in a variety of industrial, consumer and automotive operations.

Features/Characteristics of SIA472EDJ-T1-GE3

This MOSFET has a voltage rating of 100 Volts with a current rating of 0.6 amps. It has a low power dissipation of 0.88 Watts. This device also comes in a compact, efficient thermally conductive package. Combined with its ease of use, this MOSFET device can provide high levels of performance in a variety of applications.

Applications

The SIA472EDJ-T1-GE3 MOSFET is used in applications where the effective control of power is necessary. This includes:

• Automotive Telecommunications
• Industrial Control
• Automotive Chargers
• Motor Drives
• Industrial Switching
• Batteries
• High-Voltage Lighting
• Smart Meters
• Power Conditioning
• Medical Electronics

Working Principle

The MOSFET works on the principle of majority charge carriers. It acts as a switch, allowing an amount of current flowing through it if pre-specified voltage is applied across its terminals. The device has a gate electrode between the source and drain that can act as a metal electrode. Through this electrode, a voltage is applied on the channel between the source and drain that enables flow of majority carriers. This voltage can be varied to control the current.

The gate terminal of a MOSFET has an extremely high input resistance. This makes it highly desirable for several applications that require a high resistance for linear control. When the voltage applied to the gate terminal of the MOSFET is 0V, it is ‘OFF’. When a high voltage is applied to the gate terminal, it is ‘ON’. This is the basic working principle of a MOSFET.

Apart from acting as a switch, the SIA472EDJ-T1-GE3 is an ideal choice for several other applications. It can be used as a linear amplifier due to its high input resistance and low forward voltage. It can also be used as buffers or logical gates in digital circuits. It is also used in regulated power supplies and motor drives, due to its capability to prevent voltage overshoot and its fast switching capabilities.

Advantages

The SIA472EDJ-T1-GE3 offers many advantages over conventional transistors. It has a low power dissipation of 0.88 Watts, and a high breakdown voltage of 100V. It also has a high input resistance of 140KΩ, making it ideal for linear amplification. This device has a fast switching speed and is relatively easy to apply to a circuit. In addition, its small size makes it ideal for a wide range of applications.

Conclusion

The SIA472EDJ-T1-GE3 is an extremely versatile power MOSFET device. Its low power dissipation, high input resistance, and fast switching capabilities make it suitable for a wide range of applications. The small size and the ease of use of this device allow it to perform well in a variety of contexts. This device is often used in applications such as automotive telecommunications, industrial control, automotive chargers, motor drives, industrial switching, batteries, high-voltage lighting, smart meters, power conditioning, and medical electronics.

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