SI5406DC-T1-GE3

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The Si5406DC-T1-FE3 (Si5406) is an ultra-high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) from Infineon Technologies. It is a feature-rich, highly-flexible MOSFET offering low on- resistance and fast turn-on/off, making it suitable for applications such as motor control, solenoid control, and DC-DC conversion.

The Si5406 features an integrated diode, allowing for simpler designs and reducing component count. It is rated for an operating voltage of 600 V, an on-resistance of 1.7 Ω, a breakdown voltage of 2669 V, and a gate-source voltage of 20-100 V. It also offers thermal shutdown and undervoltage lockout protection in order to prevent damage in the event of a short circuit or overvoltage.

The Si5406’s working principle is based on the principle of the MOSFET, which is basically a transistor with three terminals, a source, a gate, and a drain. A voltage applied to the gate controls the flow of current between the source and the drain. When a positive voltage is applied to the gate, it creates an electronic field which attracts electrons in the channel and allows current to flow; when no voltage is applied, the electrons are repelled and the field is destroyed, stopping the flow of current.

The Si5406 is a self-contained building block which features an integrated diode. It is a relatively easy to use component, providing an easy way to configure a circuit and to design high-performance systems. It is optimized for applications such as motor control, solenoid control, and DC-to-DC conversion. It is also suitable for other applications such as switch-mode power supplies, battery packs, and load switches. The Si5406 offers a wide range of benefits, including an integrated fast-recovery diode, an extended temperature range, a low on-resistance and a fast turn-on/off time.

In conclusion, the Si5406DC-T1-GE3 is an ultra-high-voltage N-channel MOSFET from Infineon Technologies. It features an integrated diode and is suitable for applications such as motor control, solenoid control, and DC-DC conversion. It offers a wide range of benefits, including an integrated fast-recovery diode, an extended temperature range, a low on-resistance and a fast turn-on/off time. As such, it is an ideal choice for applications requiring high-performance and fast switching times.

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