Diodes dc switching controllers - Allicdata Electronics

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SIA810DJ-T1-GE3 -ND	SIA810DJ-T1-GE3	Vishay Siliconix	View more Series: LITTLE FOOT Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Dual Package / Case: PowerPAK SC-70-6 Dual	1000 Order	3000+: $0.3012
R6004KNX-ND	R6004KNX	ROHM Semiconductor	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	486 Order	1+: $1.0647 10+: $0.9431 100+: $0.7455 500+: $0.5782 1000+: $0.4564
SI5858DU-T1-GE3 -ND	SI5858DU-T1-GE3	Vishay Siliconix	View more Series: LITTLE FOOT Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Dual Package / Case: PowerPAK ChipFET Dual	1000 Order	1+: $0
SSM3K7002KFULFT R-ND	SSM3K7002KFU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	3000 Order	3000+: $0.024

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