Allicdata Part #: | SIA810DJ-T1-GE3-ND |
Manufacturer Part#: |
SIA810DJ-T1-GE3 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 4.5A SC70-6 |
More Detail: | N-Channel 20V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surfa... |
DataSheet: | SIA810DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.30125 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta), 6.5W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 11.5nC @ 8V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 3.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIA810DJ-T1-GE3 is a unique type of low-voltage, low-power FET that is used in many applications for devices ranging from aerospace to automotive and industrial. This type of Field-Effect Transistor (FET) is specifically designed for use in low-voltage and low-power digital and analog applications. This type of device is highly versatile and offers a wide range of applications not only in the industrial sector, but also in the aerospace, automotive, and consumer electronics sectors. The SIA810DJ-T1-GE3 is often used in noise-sensitive implementations and has a wide range of capabilities due to its high saturation voltage.The SIA810DJ-T1-GE3 is a single FET (Field-Effect Transistor), which means it has only one source, gate, and drain. It has a gate oxide-protected gate structure and a junction-gate structure. This type of device is generally used in small-signal switching and amplification applications due to its high gain and low noise characteristics. This type of device is often incorporated into logic gate circuits and power management applications as it operates with a low voltage.The working principle of the SIA810DJ-T1-GE3 is based on the principle of a Field Effect Transistor (FET). This type of transistor utilizes electric fields to control the current that flows between the source and drain terminals. FETs are unipolar transistors, meaning that they have only one type of charge carrier. The SIA810DJ-T1-GE3 FET has three terminals – the gate, source, and drain. The gate terminal is used to control the electric fields which control the current flow between the source and drain terminals. In this type of transistor, the application of a voltage to the gate terminal will cause an electric field to be formed which will, in turn, control the current that is flowing between the source and drain.The SIA810DJ-T1-GE3 has many applications within the various industries. One of the main applications of the SIA810DJ-T1-GE3 is in the implementation of switching circuits. This type of FET can be used to switch both digital and analog signals, making them suitable for a variety of applications. It can also be used as a noise-canceling device due to its low noise characteristics. In addition, the high-saturation voltage of the SIA810DJ-T1-GE3 makes it an excellent choice for power management applications.The SIA810DJ-T1-GE3 is an excellent device for many applications ranging from industrial to aerospace, automotive and consumer electronics applications due to its low-voltage, low-power consumption, and noise-cancelling characteristics. Its unique design makes it suitable for many applications where other FETs simply cannot perform as reliably and effectively. The ability to switch both digital and analog signals, as well as the high-saturation voltage makes this device a great choice for any project involving small-signal switching and amplification applications.
The specific data is subject to PDF, and the above content is for reference
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