SSM3K7002KFU,LF Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SSM3K7002KFU,LF Application Field and Working Principle

The SSM3K7002KFU,LF is an Silicon carbide (SiC) N-Channel Enhancement-mode power MOSFET in a plastic package used for switching and power management. It is designed to minimize switching and conduction losses in applications requiring high frequency operation in Power Management and other Switch Mode applications.

SiC devices offer a number of advantages over conventional silicon FinFETs. Firstly, they offer a higher breakdown voltage, meaning they can be used in applications where only a small amount of voltage is available. Secondly, they are more resistant to electrostatic discharge, meaning they can be used in applications where sensitive electronic components need protection from ESD damage. Finally, the lower on-resistance of SiC devices provides improved efficiency when compared to FinFETs.

The SSM3K7002KFU,LF has a typical on-resistance of 4.6 milliohms, a maximum drain-source voltage of 15 V and a maximum drain current of 19 A. This makes it suitable for applications requiring high frequencies and high power.

The SSM3K7002KFU,LF is suitable for a range of applications including brushless motor drives, power circuits, rapid charge current protection, and active switching applications. It is also suitable for use in power converters, DC/DC converters and other industrial and automotive applications. In automotive applications, it can be used for electric and hybrid vehicle on-board chargers.

The working principle of the SSM3K7002KFU,LF is based on creating a channel between its source and drain terminals in order to control the current flow. When a voltage is applied to the gate of the MOSFET, it forms an electric field that modulates the channel width between the source and drain terminals. The resulting current is then controlled by the amount of voltage applied.

The SSM3K7002KFU,LF is designed for use in applications operating at high frequencies and so has a fast switching speed. The device is also suitable for low voltage operation (<2.5 V) making it suitable for use in battery powered applications. Finally, the device has a wide operating temperature range (-55 °C to 150 °C) making it suitable for a range of different environments.

In summary, the SSM3K7002KFU,LF is an SiC N-Channel Enhancement-mode power MOSFET in a plastic package used for switching and power management. Its improved on-resistance, higher breakdown voltage and ESD robustness make it suitable for a range of applications, from electric and hybrid vehicle on-board chargers, to high frequency, high power operations. Its fast switching speed and low voltage operation capabilities make it suitable for use in many power converters and DC/DC converter applications. Finally, its wide operating temperature range makes it suitable for a variety of different environments.

The specific data is subject to PDF, and the above content is for reference