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SI5857DU-T1-E3

SI5857DU-T1-E3T
R-ND

Vishay Siliconix

View more Series: LITTLE FOOT
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): 12V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK ChipFet Dual
Package / Case: PowerPAK ChipFET Dual

1000
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1+:

$0

SI5857DU-T1-E3TR-ND Datasheet

FDZ3N513ZT

FDZ3N513ZTTR-ND

ON Semiconductor

View more Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25C: 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3.2V, 4.5V
Rds On (Max) @ Id, Vgs: 462 mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs (Max): +5.5V, -0.3V
Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 15V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55C ~ 125C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-WLCSP (1x1)
Package / Case: 4-UFBGA, WLCSP

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1+:

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FDZ3N513ZTTR-ND Datasheet

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