FDZ3N513ZT Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDZ3N513ZT is a single P-Channel MOSFET (Metal Oxide Semiconductor Field-effect Transistor). This transistor is designed for switching applications and its key features include a blocked voltage of 500 volts, an on-resistance of 2.7 ohms typical, a gate-source threshold voltage of -3 volts and a maximum allowable drain-source voltage of 20 volts. This makes this transistor a suitable choice in many applications.

MOSFETs like the FDZ3N513ZT are used as switches to control the flow of current in a circuit. A MOSFET acts as an electronic switch, allowing current to flow through it when a voltage is applied to the gate. When the gate receives a voltage, the resulting electric field attracts electrons to the gate region, creating an inversion layer, which acts as a channel allowing current to flow through. By controlling the voltage applied to the gate, the current flowing through the transistor can also be controlled.

The FDZ3N513ZT can be used in a variety of applications, such as power supply controllers, audio power amplifiers, radio frequency (RF) circuit isolators, and light dimmers. The transistor is commonly used in circuit designs that require a switch to control the power supply or to act as an amplifier. It is commonly used in DC/DC converters to switch the current at various different voltages.

The FDZ3N513ZT is designed for very low power applications. Its maximum power dissipation rating is 3 watts at 25°C. The device is also designed to dissipate heat, which means that it will have a longer lifetime than other higher-power transistors. This also means that it can handle more current than other transistors, as it will not overheat as easily.

The FDZ3N513ZT is also very reliable. Its average failure rate is 30 parts-per-million (PPM) over a 25°C to 85°C temperature range, meaning that it has a relatively low failure rate. The transistor also has a maximum gate-source voltage rating of ±20 volts and a maximum gate voltage of +-20 volts, meaning that it can handle a variety of different operating voltages.

In summary, the FDZ3N513ZT is a single P-channel MOSFET transistor suitable for switching and power supply applications. The transistor has a low on-resistance, allowing it to control current efficiently, and its maximum power dissipation rating makes it suitable for low-power applications. The device is also very reliable, with a maximum gate voltage rating of ±20 volts and a maximum gate-source voltage rating of ±20 volts, and an average failure rate of 30 PPM. The FDZ3N513ZT is an excellent choice for many applications, due to its reliability, power handling capability and low on-resistance.

The specific data is subject to PDF, and the above content is for reference