Allicdata Part #: | SI5857DU-T1-E3TR-ND |
Manufacturer Part#: |
SI5857DU-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 6A PPAK CHIPFET |
More Detail: | P-Channel 20V 6A (Tc) 2.3W (Ta), 10.4W (Tc) Surfac... |
DataSheet: | SI5857DU-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | PowerPAK® ChipFET™ Dual |
Supplier Device Package: | PowerPAK® ChipFet Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 10.4W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 3.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI5857DU-T1-E3 is a single, general-purpose, N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with low on resistance, low gate charge, and good switching performance. This device is suitable for low-voltage and low- current applications, such as load switches, battery chargers, and DC/DC regulators.
The SI5857DU-T1-E3 is composed of a single N-channel MOSFET, connected in a standard depletion-mode structure with Source, Drain, and Gate pins. When a positive gate voltage is applied, the transistor switches on and allows current to flow from source to drain. This MOSFET is capable of handling gate voltages of up to -10V and drain voltages of up to -20V, making it suitable for a wide range of applications.
The SI5857DU-T1-E3 is a highly efficient device, with low power dissipation and high-frequency operation. The device has a maximum continuous drain to source voltage of -20V and can handle a maximum peak drain current of 1.5A. The device also features a high maximum temperature rating of 175°C, allowing it to operate reliably even in harsh environments.
The SI5857DU-T1-E3 is suitable for a wide variety of applications, including load switches, DC/DC converters, charge pumps, and other high-frequency circuits. The device is also well-suited for automotive applications, due to its low power dissipation and high temperature rating. Furthermore, the device’s low on resistance and low gate charge make it ideal for low-power applications.
The SI5857DU-T1-E3 is a versatile and reliable MOSFET suitable for a variety of applications requiring low-power and high-frequency operation. The device is composed of a single N-channel MOSFET connected in a standard depletion-mode structure, and can handle a maximum peak drain current of 1.5A. The device also features a high maximum temperature rating of 175°C, allowing it to operate reliably even in harsh environments. The device’s low on resistance and low gate charge make it ideal for low-power applications, making it suitable for load switches, DC/DC converters, charge pumps, and other high-frequency circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI5853CDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4A 1206-8... |
SI5857DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 6A PPAK C... |
SI5858DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 6A PPAK C... |
SI5853DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.7A 1206... |
SI5855DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.7A 1206... |
SI5856DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 4.4A 1206... |
SI5857DU-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 6A PPAK C... |
SI5858DU-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 6A PPAK C... |
SI5855CDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 3.7A 1206... |
SI5853DDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4A 1206-8... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...