SI5857DU-T1-E3 Allicdata Electronics
Allicdata Part #:

SI5857DU-T1-E3TR-ND

Manufacturer Part#:

SI5857DU-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 6A PPAK CHIPFET
More Detail: P-Channel 20V 6A (Tc) 2.3W (Ta), 10.4W (Tc) Surfac...
DataSheet: SI5857DU-T1-E3 datasheetSI5857DU-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® ChipFET™ Dual
Supplier Device Package: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: LITTLE FOOT®
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5857DU-T1-E3 is a single, general-purpose, N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with low on resistance, low gate charge, and good switching performance. This device is suitable for low-voltage and low- current applications, such as load switches, battery chargers, and DC/DC regulators.

The SI5857DU-T1-E3 is composed of a single N-channel MOSFET, connected in a standard depletion-mode structure with Source, Drain, and Gate pins. When a positive gate voltage is applied, the transistor switches on and allows current to flow from source to drain. This MOSFET is capable of handling gate voltages of up to -10V and drain voltages of up to -20V, making it suitable for a wide range of applications.

The SI5857DU-T1-E3 is a highly efficient device, with low power dissipation and high-frequency operation. The device has a maximum continuous drain to source voltage of -20V and can handle a maximum peak drain current of 1.5A. The device also features a high maximum temperature rating of 175°C, allowing it to operate reliably even in harsh environments.

The SI5857DU-T1-E3 is suitable for a wide variety of applications, including load switches, DC/DC converters, charge pumps, and other high-frequency circuits. The device is also well-suited for automotive applications, due to its low power dissipation and high temperature rating. Furthermore, the device’s low on resistance and low gate charge make it ideal for low-power applications.

The SI5857DU-T1-E3 is a versatile and reliable MOSFET suitable for a variety of applications requiring low-power and high-frequency operation. The device is composed of a single N-channel MOSFET connected in a standard depletion-mode structure, and can handle a maximum peak drain current of 1.5A. The device also features a high maximum temperature rating of 175°C, allowing it to operate reliably even in harsh environments. The device’s low on resistance and low gate charge make it ideal for low-power applications, making it suitable for load switches, DC/DC converters, charge pumps, and other high-frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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