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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
F7406-ND	LFUSCD06065A	Littelfuse Inc.	View more Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200A @ 650V Capacitance @ Vr, F: 179pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175C (Max)	526 Order	1+: $2.5011 10+: $2.2327 25+: $2.0092 100+: $1.8307 250+: $1.6521 500+: $1.4824 1000+: $1.2502 2500+: $1.1907
BAL99E6433HTMA1 TR-ND	BAL99E6433HTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1A @ 70V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65C ~ 150C Base Part Number: BAL99	1000 Order	40000+: $0.0154
SCS105KGC-ND	SCS105KGC	ROHM Semiconductor	View more Packaging: Tube Part Status: Not For New Designs Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 1200V Capacitance @ Vr, F: 325pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175C (Max)	1000 Order	1000+: $5.7145
1560-1020-5-ND	GDP15S120B	Global Power Technologies Group	View more Series: Amp+ Packaging: Tube Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 1200V Capacitance @ Vr, F: 895pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55C ~ 135C	1000 Order	1+: $0
APT10SCE120B-ND	APT10SCE120B	Microsemi Corporation	View more Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 43A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200A @ 1200V Capacitance @ Vr, F: 630pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $0
C4D20120A-ND	C4D20120A	Cree/Wolfspeed	View more Series: Z-Rec Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 54.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200A @ 1200V Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55C ~ 175C	3038 Order	--
C3D02060E-ND	C3D02060E	Cree/Wolfspeed	View more Series: Z-Rec Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50A @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	--
1560-1228-ND	GP2D015A120B	Global Power Technologies Group	View more Series: Amp+ Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 30A @ 1200V Capacitance @ Vr, F: 54pF @ 1200V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	--
IDW20G65C5BXKSA 2-ND	IDW20G65C5BXKSA 2	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180A @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55C ~ 175C	1000 Order	240+: $5.0094
IDV05S60CXKSA1- ND	IDV05S60CXKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70A @ 600V Capacitance @ Vr, F: 240pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $0
497-11209-2-ND	STPSC1006G-TR	STMicroelectronics	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150A @ 600V Capacitance @ Vr, F: 650pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: DPAK Operating Temperature - Junction: -40C ~ 175C Base Part Number: STPSC1006	1000 Order	1+: $0
GPP60A-E3/54-ND	GPP60A-E3/54	Vishay Semiconductor Diodes Division	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5s Current - Reverse Leakage @ Vr: 5A @ 50V Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55C ~ 175C Base Part Number: GPP60A	1000 Order	1600+: $0.2999
497-13450-2-ND	STPSC10H065B-TR	STMicroelectronics	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 650V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -40C ~ 175C Base Part Number: STPSC10H065	1000 Order	--
SICRD101200TR-N D	SICRD101200TR	SMC Diode Solutions	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 1200V Capacitance @ Vr, F: 640pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55C ~ 175C	1000 Order	2500+: $2.9197
SDT12S60IN-ND	SDT12S60	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400A @ 600V Capacitance @ Vr, F: 450pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $0
APT10SCD120B-ND	APT10SCD120B	Microsemi Corporation	View more Packaging: Tube Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 36A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200A @ 1200V Capacitance @ Vr, F: 600pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55C ~ 150C	1000 Order	1+: $0
APT30SCD65B-ND	APT30SCD65B	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 46A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 600A @ 650V Capacitance @ Vr, F: 945pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55C ~ 150C	1000 Order	1+: $0
1560-1036-5-ND	GP2D005A120A	Global Power Technologies Group	View more Series: Amp+ Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10A @ 1200V Capacitance @ Vr, F: 317pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55C ~ 175C	1324 Order	1+: $2.3184 10+: $2.067 50+: $1.8605 100+: $1.6951 250+: $1.5297 500+: $1.3726 1000+: $1.1576 2500+: $1.1025
1740-1221-ND	NXPSC10650Q	WeEn Semiconductors	View more Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250A @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175C (Max)	4986 Order	--
MMBD914FSTR-ND	MMBD914	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5A @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150C (Max) Base Part Number: MMBD914	285000 Order	--
497-16322-2-ND	STPSC10H065GY-T R	STMicroelectronics	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 650V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40C ~ 175C	1000 Order	1000+: $1.4392 2000+: $1.3706
1242-1137-ND	GB02SLT12-220	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50A @ 1200V Capacitance @ Vr, F: 138pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55C ~ 175C Base Part Number: GB02SLT12	59 Order	1+: $2.7216 10+: $2.4293 50+: $2.1861
FFSH10120A-F085 OS-ND	FFSH10120A-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101 Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 17A (DC) Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200A @ 1200V Capacitance @ Vr, F: 612pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $8.3853 10+: $7.5474 450+: $5.7025
RGP10JE-E3/91-N D	RGP10JE-E3/91	Vishay Semiconductor Diodes Division	View more Series: Automotive, AEC-Q101, Superectifier Packaging: Tape & Box (TB) Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5A @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65C ~ 175C	1000 Order	12500+: $0.1012
1655-1953-ND	SICR10650	SMC Diode Solutions	View more Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 650V Capacitance @ Vr, F: 695pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55C ~ 175C	250 Order	1+: $3.2445 10+: $2.898 50+: $2.6085 100+: $2.3766 250+: $2.1447 500+: $1.9244 1000+: $1.623
IDH20G65C5XKSA2 -ND	IDH20G65C5XKSA2	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 210A @ 650V Capacitance @ Vr, F: 590pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $5.5377 10+: $5.0041 100+: $4.1432 500+: $3.6078 1000+: $3.1423
641-1928-ND	CDBDSC10650-G	Comchip Technology	View more Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 33A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 650V Capacitance @ Vr, F: 690pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252) Operating Temperature - Junction: -55C ~ 175C	480 Order	1+: $2.961 10+: $2.646 80+: $2.3814 160+: $2.1697 320+: $1.958 560+: $1.7569 1040+: $1.4818
1N4004GPE-E3/91 GITB-ND	1N4004GPE-E3/91	Vishay Semiconductor Diodes Division	View more Series: SUPERECTIFIER Packaging: Tape & Box (TB) Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2s Current - Reverse Leakage @ Vr: 5A @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65C ~ 175C	1000 Order	12500+: $0.1219
SDD04S60-ND	SDD04S60	Infineon Technologies	View more Series: CoolSiC Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200A @ 600V Capacitance @ Vr, F: 150pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: P-TO252-3 Operating Temperature - Junction: -55C ~ 175C	1000 Order	--
1560-1053-5-ND	GP2D020A170B	Global Power Technologies Group	View more Series: Amp+ Packaging: Tube Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40A @ 1700V Capacitance @ Vr, F: 1624pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $0
IDL02G65C5XUMA1 -ND	IDL02G65C5XUMA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 35A @ 650V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55C ~ 175C	1000 Order	3000+: $0.4207
NXPSC08650DJ-ND	NXPSC08650DJ	WeEn Semiconductors	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 230A @ 650V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: 175C (Max)	1000 Order	7500+: $1.3936
FFSP20120A-ND	FFSP20120A	ON Semiconductor	View more Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200A @ 1200V Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55C ~ 175C	595 Order	1+: $7.2324 10+: $6.5325 100+: $5.4081
IDW30G65C5XKSA1 -ND	IDW30G65C5XKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 220A @ 650V Capacitance @ Vr, F: 860pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55C ~ 175C	1 Order	1+: $7.8876 10+: $7.2494 240+: $6.1225
TRS12E65CS1Q-ND	TRS12E65C,S1Q	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90A @ 170V Capacitance @ Vr, F: 65pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175C (Max)	38 Order	1+: $8.1018
BAS16E6327HTSA1 TR-ND	BAS16E6327HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1A @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150C (Max) Base Part Number: BAS16	42000 Order	3000+: $0.0189 6000+: $0.017 15000+: $0.0148 30000+: $0.0133 75000+: $0.0119 150000+: $0.0099
C3D03060F-ND	C3D03060F	Cree/Wolfspeed	View more Series: Z-Rec Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50A @ 600V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55C ~ 175C	3492 Order	--
UB8DT-E3/4W-ND	UB8DT-E3/4W	Vishay Semiconductor Diodes Division	View more Packaging: Tube Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10A @ 200V Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55C ~ 150C	1000 Order	2000+: $0.2799
MBRS4201PT3G-ND	MBRS4201PT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 860mV @ 4A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1mA @ 200V Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55C ~ 150C	1000 Order	2500+: $0.457
CSD02060A-ND	CSD02060A	Cree/Wolfspeed	View more Packaging: Tube Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200A @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $0

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