| Allicdata Part #: | 1655-1948-ND |
| Manufacturer Part#: |
SICRF5650 |
| Price: | $ 2.43 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | SMC Diode Solutions |
| Short Description: | DIODE SCHOTTKY SILICON CARBIDE S |
| More Detail: | Diode Silicon Carbide Schottky 650V 5A Through Hol... |
| DataSheet: | SICRF5650 Datasheet/PDF |
| Quantity: | 250 |
| 1 +: | $ 2.20500 |
| 10 +: | $ 1.96623 |
| 50 +: | $ 1.76980 |
| 100 +: | $ 1.61249 |
| 250 +: | $ 1.45517 |
| 500 +: | $ 1.30572 |
| 1000 +: | $ 1.10121 |
| 2500 +: | $ 1.04878 |
| Series: | -- |
| Part Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 650V |
| Current - Average Rectified (Io): | 5A |
| Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 5A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0ns |
| Current - Reverse Leakage @ Vr: | 60µA @ 650V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 Full Pack, Isolated Tab |
| Supplier Device Package: | ITO-220AC |
| Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes - Rectifiers - Single
SICRF5650 is a single Schottky diode with negative voltage and low losses developed by Infineon Technologies. This diode is made of silicon carbide (SiC) and is designed for high temperature applications up to 200°C. It belongs to the family of silicon carbide Schottky diodes and is mainly used in solar inverters and battery chargers.
Applications
SiCRF5650 is mainly used in solar inverters and battery chargers. The solar inverters are mainly used in large-scale applications to produce electrical power from solar energy and this diode optimizes the energy saving and performance of the solar system. Battery chargers use SICRF5650 diode to charge lead-acid or nickel-cadmium/metal-hydride battery systems. It is also used to in Automotive and Industrial conditions such films flow controllers, battery pack controllers and gate drivers.
Features and Benefits
- Low losses for low losses V(R) for improved efficiency
- High breakdown voltage for greater reliability
- Low switching voltage - VF and Low reverse current
- Excellent temperature characteristics and high surge capability
- Easy and low cost installation
- Compact in size
- High temperature capability up to 200°C
Working Principle
SICRF5650 diodes are made of silicon carbide and are used for rectification. The principle of rectification of voltage involves passing an alternating current (AC) through a diode. When a current is applied to a diode, it allows for conduction in one direction and blocks current from the other. This is what is called rectification. A diode acts like an electronic version of a valve. The reverse voltage of the diode is the minimum voltage value required to stop current flow in the opposite direction of the forward current flow.
SiCRF5650 has a low reverse voltage, as well as low losses, which makes it easier to handle and helps in improving efficiency. In addition, the diode has a high breakdown voltage which provides greater reliability. This diode is also known for its excellent temperature characteristics, high surge capability and easy installation. Since the SiCRF5650 has a small package size, it is possible to mount it on a board even in tight spaces.
Conclusion
SICRF5650 diodes are used for rectification and are generally used for high temperature applications up to 200°C. This diode is made from silicon carbide and is particularly used in automotive and industrial applications such as battery chargers, gate drivers, solar inverters and flow controllers. SiCRF5650 has low reverse voltage, low losses, high breakdown voltage and excellent temperature characteristics. It is useful in tight spaces due to its compact size.
The specific data is subject to PDF, and the above content is for reference
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SICRF5650 Datasheet/PDF