IDH12G65C5XKSA1

Series:	CoolSiC™
Packaging:	Tube
Part Status:	Discontinued at Digi-Key
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650V
Current - Average Rectified (Io):	12A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7V @ 12A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0ns
Current - Reverse Leakage @ Vr:	190µA @ 650V
Capacitance @ Vr, F:	360pF @ 1V, 1MHz
Mounting Type:	Through Hole
Package / Case:	TO-220-2
Supplier Device Package:	PG-TO220-2
Operating Temperature - Junction:	-55°C ~ 175°C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the IDH12G65C5XKSA1

The IDH12G65C5XKSA1 is an integrated diode rectifier module classified as a single-phase half-bridge in the rectifier family. It is a medium-voltage DC link unit constructed with 6 x IGBTs in a double H-Bridge configuration using a 12-kV, 65-mA MMC (multimodule capacitor) rated for average current operation. The IDH12G65C5XKSA1 includes two sources of energy, one for the DC link and the other to power the logic and signal circuits.

Application Field

The IDH12G65C5XKSA1 is designed for DC power supplies and a variety of other applications requiring high voltage and high current rectification. The module can deliver power up to 12kV with current capabilities of up to 65mA. It is suitable for use in motor control, industrial robots and AC to DC conversion applications.

Key Features of the IDH12G65C5XKSA1

The IDH12G65C5XKSA1 offers many performance-driven features and benefits including:

• Soft switching technology for less EMI and lower switching losses than reverse recovery rectifiers.
• Full MOSFET gate protection from over-voltage and over-current event.
• High efficiency up to 99.0%.
• Integrated EMI filter.
• Designed for high-temperature and high-humidity applications.
• Over-temperature protection and operating temperature up to 125C.

Working Principle

The IDH12G65C5XKSA1 works by using two IGBTs to form a half-bridge. This IGBT controlled power flow is regulated by a DC voltage source. A suitable MMC is included for DC link to store the energy. The IGBTs are controlled by a negative/positive gate driver with –6V to +6V control voltage range for soft switching without any reverse recovery current.The IDH12G65C5XKSA1 provides a robust solution offering excellent protection from EMI, over-voltage and over-current events. It is designed to deliver high efficiency, increased safety and superior reliability in industrial and commercial applications across the world.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description