Owl data diode - Allicdata Electronics

Photo	Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)	PDF
	SSM5H12TU(TE85L F)TR-ND	SSM5H12TU(TE85L ,F)	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 133 mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFV Package / Case: 6-SMD (5 Leads), Flat Lead	1000 Order	1+: $0
	SI4752DY-T1-GE3 -ND	SI4752DY-T1-GE3	Vishay Siliconix	View more Series: SkyFET, TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--

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SSM5H12TU(TE85L
F)TR-ND

SSM5H12TU(TE85L
,F)

Toshiba Semiconductor and Storage

View more Series: U-MOSIII
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Rds On (Max) @ Id, Vgs: 133 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4V
Vgs (Max): 12V
Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: 150C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFV
Package / Case: 6-SMD (5 Leads), Flat Lead

1000
Order

1+:

SI4752DY-T1-GE3
-ND

SI4752DY-T1-GE3

Vishay Siliconix

View more Series: SkyFET, TrenchFET
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs (Max): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

1000
Order

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