Allicdata Part #: | SI4752DY-T1-GE3-ND |
Manufacturer Part#: |
SI4752DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 25A 8-SO |
More Detail: | N-Channel 30V 25A (Tc) 3W (Ta), 6.25W (Tc) Surface... |
DataSheet: | SI4752DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 6.25W (Tc) |
FET Feature: | Schottky Diode (Body) |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | SkyFET®, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4752DY-T1 - GE3 Application Field and Working Principle
The SI4752DY-T1-GE3 is a planar double-diffused MOSFET transistor manufactured by International Rectifier (IR). The transistor is designed and manufactured to operate in high frequency applications up to 100 MHz and at supply voltages of up to 20 V. It is suitable for both high power and low power conversion applications, including power management and switching applications, and is often used in portable applications.
A MOSFET is a type of field-effect transistor. The MOSFET works by using an electrical field to control the amount of current flowing into a channel between the source and the drain terminals. The gate terminal is used to control this field and hence to control the amount of current flow between the source and the drain. When a voltage is applied to the gate terminal, the field increases and the current flow is increased. When the voltage is reduced, the field is decreased and the current flow is reduced.
The SI4752DY-T1-GE3 is a double-diffused transistor, which means two areas of closely spaced small resistors within the device. The resistors are essentially connected in series between the gate and the source node in the diagram. This combination of two small resistors permits a much higher voltage to be applied to the MOSFET than is possible with a single small resistor. This increases the power handling capability of the transistor, allowing it to be used in high power applications.
The SI4752DY-T1-GE3 is a single device, with one source, one drain and one gate. The device is powered by both a positive voltage applied to the source terminal and a negative voltage applied to the drain terminal. This allows for current flow in either direction through the device, which can be useful in applications such as power management and switching. The gate voltage is used to control the amount of current flowing through the device.
The power handling capabilities of the SI4752DY-T1-GE3 make it suitable for use in a variety of applications, from portable consumer electronics to automotive power supplies. Its high frequency operation makes it suitable for high speed switching applications, and its ability to handle high voltages make it suitable for power management and conversion applications. This makes the SI4752DY-T1-GE3 a versatile device suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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