SSM5H12TU(TE85L,F) Allicdata Electronics
Allicdata Part #:

SSM5H12TU(TE85LF)TR-ND

Manufacturer Part#:

SSM5H12TU(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 1.9A UFV
More Detail: N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount U...
DataSheet: SSM5H12TU(TE85L,F) datasheetSSM5H12TU(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: U-MOSIII
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Rds On (Max) @ Id, Vgs: 133 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFV
Package / Case: 6-SMD (5 Leads), Flat Lead
Description

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The SSM5H12TU(TE85L,F) is a semiconductor device that belongs to the family of transistors, FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). Specifically, it is a single MOSFET that is used for a wide range of applications. Being created as an enhanced version of the SSM5H10TU series, the SSM5H12TU(TE85L,F) provides improved characteristics in terms of maximum output current and minimum RDS(ON). This characteristic makes the SSM5H12TU(TE85L,F) suited for a variety of applications that require higher output currents, such as power supplies, motor drives and lighting solutions.

The SSM5H12TU(TE85L,F) is a N-channel MOSFET. This means that the section of the affected area of its structure (and, thus, the conductive pathway of current) is made up of positively charged carriers (electrons in case of N-channel devices). This structure gives the device two possible states - either conductive or off - by manipulating the voltage with the gate terminal. This is how the SSM5H12TU(TE85L,F) operates, as an electronic switch, in order to control the current flow through different circuits.

SSM5H12TU(TE85L,F) provides low-level gate drive signals and reverse body diode protection. They can also support current level up to +75A and drain to source breakdown voltage of 600V. The SSM5H12TU(TE85L,F) is also RoHS compliant and it replaces the SSM5H10TU series for applications that require higher provides current.

Since the SSM5H12TU(TE85L,F) is a single MOSFET, it is easy to install, although it can be sensitive to ElectroStatic Discharge (ESD). Additionally, the SSM5H12TU(TE85L,F) can be used in higher power configurations than the SSM5H10TU series. This feature makes it ideal for higher power applications such as motor drives, lighting solutions, and high current switches.

Overall, the SSM5H12TU(TE85L,F) is a versatile MOSFET device that can be used in a wide range of applications, such as power supplies, motor drives, lighting solutions, high current switches, and other applications that require higher power and current level. It operates by manipulating the voltage with the gate terminal, allowing it to switch current on and off in different circuits.

The specific data is subject to PDF, and the above content is for reference

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