MASMBJ110AE3 Allicdata Electronics

MASMBJ110AE3 Circuit Protection

Allicdata Part #:

1086-5447-ND

Manufacturer Part#:

MASMBJ110AE3

Price: $ 3.93
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 110V 177V DO214AA
More Detail: N/A
DataSheet: MASMBJ110AE3 datasheetMASMBJ110AE3 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
180 +: $ 3.56409
Stock 1000Can Ship Immediately
$ 3.93
Specifications
Series: Military, MIL-PRF-19500
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 110V
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Current - Peak Pulse (10/1000µs): 3.4A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMBJ (DO-214AA)
Description

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TVS devices (Transient Voltage Suppressors) such as the MASMBJ110AE3 are used to protect a circuit from exposure to electrostatic discharges (ESDs) and transient overvoltage spikes from caused by nearby lightning, generator, circuit breaker or even wiring connections to other systems. TVS diodes are one of the most popular TVS devices, and they are becoming increasingly common in high-power and sensitive electronics applications. The MASMBJ110AE3 is a bidirectional TVS diode that has a peak pulse power rating of 1,500W. It provides protection for a wide range of operating temperatures from -55°C to 150°C, and is AEC-Q101 qualified for automotive applications.

The MASMBJ110AE3 is a low-power diode with an operating voltage of 15V and a breakdown voltage of 20V, making it ideal for protecting low voltage circuits from exposure to high voltage transients. This diode has a peak pulse current rating of 80A and a capacitance of 0.22pF. The device has a low body diode reverse leakage current and is designed to maintain high speed conduction while allowing minimal voltage overshoot. It is capable of withstanding electrostatic discharges up to 25kV for contact discharges, and is able to dissipate spike energy up to 600W when mounted on a 1-inch copper pad.

Working principle: In order to provide protection against transient overvoltage spikes, TVS devices such as the MASMBJ110AE3 employ the phenomenon of avalanche breakdown. This is a process that occurs when a forward-biased diode is exposed to a voltage higher than its breakdown voltage. When this happens, the diode’s junction breaks down and current is allowed to flow rapidly, creating an avalanche of electrons that dissipates the excess energy. This helps to protect the circuit from the damaging effects of ESDs and transients.

Applications: The MASMBJ110AE3 is suitable for a range of applications, and is particularly well-suited for use in automotive electronics. It can be used to protect cable assemblies from ESDs, circuit boards from power surges, and to suppress voltage transients in various systems. Its low capacitance makes it ideal for use in data and high-speed signal transmission applications, while its fast response time makes it suitable for protection of a wide range of automotive circuits. Due to its AEC-Q101 qualification, the MASMBJ110AE3 is suitable for use in applications where quality, reliability and safety are of paramount importance.

In summary, the MASMBJ110AE3 is an effective TVS diode that provides a robust protection solution for low voltage applications. Its fast response time, low power consumption and low capacitance makes it ideal for use in automotive and data transmission applications, while its AEC-Q101 qualification ensures that its performance can be relied upon in certain high-quality applications.

The specific data is subject to PDF, and the above content is for reference

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