Allicdata Part #: | 1086-5475-ND |
Manufacturer Part#: |
MASMBJ150AE3 |
Price: | $ 3.93 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 150V 243V DO214AA |
More Detail: | N/A |
DataSheet: | MASMBJ150AE3 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
180 +: | $ 3.56409 |
Series: | Military, MIL-PRF-19500 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Unidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 150V |
Voltage - Breakdown (Min): | 167V |
Voltage - Clamping (Max) @ Ipp: | 243V |
Current - Peak Pulse (10/1000µs): | 2.5A |
Power - Peak Pulse: | 600W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMBJ (DO-214AA) |
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TVS (Transient Voltage Suppressor) diodes are an essential component in circuit boards, as they’re designed to provide protection against transient high voltage events such as electrostatic discharge (ESD). A well-known example of a TVS diode is the MASMBJ150AE3, manufactured by Microsemi. This family of components is also known as surge protection diodes or simply ESD protection diodes and is often used in automotive, telecommunications, consumer electronics, and power management applications.
The MASMBJ150AE3 device is a shunt device operating over a 200V breakdown voltage range in a 4-pin DO-214AC (SMC) package. Its low capacitance esure industry-leading ESD protection and it is capable of handling 15-30A average impulse current per line. It is also designed to protect up to 15 supercapacitors in automotive, consumer, industrial and military applications. The device itself is designed to provide electrostatic discharge protection for two power lines, and each pin must be connected through a low-inductance capacitor to protect the ESD clamp energized line.
The working principle of the MASMBJ150AE3 component is based on the principle of avalanche breakdown, which refers to an increase in current due to a change in voltage. In this case, when the transient voltage exceeds the peak operating voltage, the device enters avalanche breakdown and the current flow is correspondingly increased.
Once avalanche breakdown is reached, the current continues to increase until the energy of the ESD pulse is delivered back to the source. As this return current passes through the ESD protection device, some of its energy is dissipated due to the voltage-current characteristics of the device. Thus, the MASMBJ150AE3 acts as a transient voltage suppressor, protecting the sensitive components within the circuit.
In summary, the MASMBJ150AE3 is a TVS diode designed for use in automotive, telecommunications, consumer electronics and power management applications. Its low capacitance ensures industry-leading ESD protection capabilities, while the avalanche breakdown principle enables the device to suppress transient high voltage events. Thus, the MASMBJ150AE3 is an excellent choice for protecting against electrostatic discharge.
The specific data is subject to PDF, and the above content is for reference
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MASMBJ10AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MASMBJ110A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 110V 177V DO214... |
MASMBJ110AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 110V 177V DO214... |
MASMBJ11A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MASMBJ11AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MASMBJ120A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 120V 193V DO214... |
MASMBJ120AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 120V 193V DO214... |
MASMBJ12A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MASMBJ12AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MASMBJ130A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 130V 209V DO214... |
MASMBJ130AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 130V 209V DO214... |
MASMBJ13A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MASMBJ13AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MASMBJ14A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MASMBJ14AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MASMBJ150A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 150V 243V DO214... |
MASMBJ150AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 150V 243V DO214... |
MASMBJ15A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
MASMBJ15AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
MASMBJ160A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 160V 259V DO214... |
MASMBJ160AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 160V 259V DO214... |
MASMBJ16A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 16V 26V DO214AA |
MASMBJ16AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 16V 26V DO214AA |
MASMBJ170A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 170V 275V DO214... |
MASMBJ170AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 170V 275V DO214... |
MASMBJ17A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
MASMBJ17AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
MASMBJ18A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MASMBJ18AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MASMBJ20A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MASMBJ20AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MASMBJ22A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
MASMBJ22AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
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