Allicdata Part #: | 70V06L20PF-ND |
Manufacturer Part#: |
70V06L20PF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 64TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (16... |
DataSheet: | 70V06L20PF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LQFP |
Supplier Device Package: | 64-TQFP (14x14) |
Base Part Number: | IDT70V06 |
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Memory
The 70V06L20PF is a dynamic 6-kbit CMOS static RAM. It has one word of 6,144bits of non-volatile memory organized as sixbit words. It is designed to provide low access times and minimal numbers of machine cycles. The 70V06L20PF is used mainly for advanced applications such as data collection, telecommunications, automotive, medical, and office automation.
The 70V06L20PF is particularly suited for multimedia applications because it has a built-in refresh control that enables it to handle large amounts of dynamic data without losing data integrity. The 70V06L20PF\'s built-in refresh control also helps reduce power consumption, which is particularly beneficial for battery operated applications.
The working principle of the 70V06L20PF is similar to the general operation of most other dynamic RAMs. It stores each bit in a cell of the memory array along with extra bits needed to hold the data and control the memory access while being read or written. Each of these cells has two transistors, one transistor acts as a switch to control the access to the cell, and the other as a storage device. The access transistor is connected to rows and columns of the memory array and the storage transistor is connected to a cell line.
When an instruction is given to the chip, it checks the address of the data in the memory array and then activates the access transistor to select the desired cell. When the access transistor is activated, the memory cell data is transferred from the cell to the output line. The data is then written or read into or out of the cell, respectively. Once the data has been written to or read out, the access transistor is deactivated, the data is stored, and the process can be repeated.
The 70V06L20PF’s built-in refresh control enables it to retain data integrity after a long period of time even in the absence of external refresh signals. The refresh control begins is dependent on the chip\'s internal clock and is based on the cell\'s capacitance. The refresh control starts when the capacitance is low and stops when it is high. It is set to refresh the data with a period of 25ms and can be adjusted with a suitable external resistor to provide additional refresh cycles.
The 70V06L20PF is a dynamic 6-kbit CMOS static RAM, ideal for applications that require low access time and minimal machine cycles. Its built-in refresh control helps maintain data integrity and reduce power consumption, making it suitable for battery operated applications. It can be used in a variety of applications, such as data collection, telecommunications, automotive, medical, and office automation.
The specific data is subject to PDF, and the above content is for reference
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